18589281. FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
Contents
FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE
Organization Name
Inventor(s)
JEFFREY JUNHAO Xu of Shenzhen (CN)
FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18589281 titled 'FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE
The abstract describes a ferroelectric memory with memory cells containing ferroelectric capacitors, each consisting of a first electrode, a second electrode, and a ferroelectric layer in between. Isolation passivation layers are also present to prevent oxygen diffusion to the electrodes.
- Ferroelectric memory with memory cells containing ferroelectric capacitors
- Each capacitor has a first electrode, a second electrode, and a ferroelectric layer
- Isolation passivation layers prevent oxygen diffusion to the electrodes
- Suppresses diffusion of the oxygen element in the ferroelectric layer to the electrodes
Potential Applications: - Non-volatile memory storage - High-speed data processing - Embedded systems in electronics
Problems Solved: - Prevents oxygen diffusion to electrodes - Enhances memory cell performance and longevity
Benefits: - Improved memory cell reliability - Enhanced data retention capabilities - Increased efficiency in data processing
Commercial Applications: Title: Advanced Ferroelectric Memory Technology for High-Performance Electronics This technology can be used in: - Semiconductor industry for memory storage - Consumer electronics for faster data processing - Military and aerospace applications for reliable memory storage
Questions about Ferroelectric Memory Technology: 1. How does the presence of isolation passivation layers improve the performance of ferroelectric memory cells?
- The isolation passivation layers prevent oxygen diffusion to the electrodes, enhancing the reliability and longevity of the memory cells.
2. What are the potential drawbacks of using ferroelectric memory in electronic devices?
- While ferroelectric memory offers fast data processing and non-volatile storage, it may have limitations in terms of scalability and cost compared to other memory technologies.
Original Abstract Submitted
A ferroelectric memory includes a substrate and a plurality of memory cells formed on the substrate. Each memory cell includes a ferroelectric capacitor. The ferroelectric capacitor includes a first electrode and a second electrode, and a ferroelectric layer formed between the first electrode and the second electrode. The ferroelectric capacitor further includes a first isolation passivation layer formed between the first electrode and the ferroelectric layer, and a second isolation passivation layer formed between the second electrode and the ferroelectric layer. The first isolation passivation layer is configured to suppress diffusion of the oxygen element in the ferroelectric layer to the first electrode, and the second isolation passivation layer is configured to suppress diffusion of the oxygen element in the ferroelectric layer to the second electrode.
