18588586. SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN
Organization Name
Inventor(s)
Jongki Jung of Hwaseong-si (KR)
Myungil Kang of Yongin-si (KR)
SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN - A simplified explanation of the abstract
This abstract first appeared for US patent application 18588586 titled 'SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN
The semiconductor device described in the abstract includes a substrate with two active fins, isolation layers, and a merged source/drain.
- The device features a first active fin with two side surfaces and a second active fin with two side surfaces.
- Isolation layers are present on the side surfaces of the active fins to prevent interference.
- A merged source/drain is located on both active fins for efficient electrical connections.
Potential Applications: - This technology can be used in the manufacturing of advanced integrated circuits. - It can enhance the performance and efficiency of electronic devices such as smartphones and computers.
Problems Solved: - The technology addresses the challenge of minimizing interference between active fins in semiconductor devices. - It improves the overall functionality and reliability of electronic components.
Benefits: - Increased speed and performance of electronic devices. - Enhanced energy efficiency and reduced power consumption. - Improved reliability and longevity of semiconductor devices.
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Electronics This technology has significant commercial potential in the semiconductor industry, particularly in the development of high-performance electronic devices. It can cater to the growing demand for faster and more efficient electronics in various sectors such as telecommunications, computing, and consumer electronics.
Prior Art: Readers can explore prior art related to semiconductor device fabrication processes, isolation techniques, and source/drain integration in semiconductor devices to gain a deeper understanding of the technological advancements in this field.
Frequently Updated Research: Researchers are continually exploring new methods to enhance the performance and efficiency of semiconductor devices through innovative design and fabrication techniques. Stay updated on the latest research in semiconductor technology to discover cutting-edge advancements in the field.
Questions about Semiconductor Devices: 1. How does the presence of isolation layers impact the performance of semiconductor devices? Isolation layers play a crucial role in preventing interference between active fins, thereby improving the overall functionality and reliability of semiconductor devices.
2. What are the key factors influencing the design of merged source/drain structures in semiconductor devices? The design of merged source/drain structures is influenced by factors such as electrical conductivity, compatibility with different materials, and overall device performance.
Original Abstract Submitted
A semiconductor device includes a substrate, a first active fin on the substrate, the first active fin including a first side surface and a second side surface opposing the first side surface, a second active fin on the substrate, the second active fin including a third side surface facing the second side surface and a fourth side surface opposing the third side surface of the second active fin, a first isolation layer on the first side surface of the first active fin, a second isolation layer between the second side surface of the first active fin and the third side surface of the second active fin, a third isolation layer on the fourth side surface of the second active fin and a merged source/drain on the first and second active fins.
