18588312. RADIATION DETECTOR, RADIATION IMAGING SYSTEM, AND METHOD FOR MANUFACTURING RADIATION DETECTOR simplified abstract (CANON KABUSHIKI KAISHA)
Contents
- 1 RADIATION DETECTOR, RADIATION IMAGING SYSTEM, AND METHOD FOR MANUFACTURING RADIATION DETECTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 RADIATION DETECTOR, RADIATION IMAGING SYSTEM, AND METHOD FOR MANUFACTURING RADIATION DETECTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Commercial Applications
- 1.9 Questions about Radiation Detector with Semiconductor and Resin Layers
- 1.10 Original Abstract Submitted
RADIATION DETECTOR, RADIATION IMAGING SYSTEM, AND METHOD FOR MANUFACTURING RADIATION DETECTOR
Organization Name
Inventor(s)
TOSHIYUKI Mishima of Kanagawa (JP)
RADIATION DETECTOR, RADIATION IMAGING SYSTEM, AND METHOD FOR MANUFACTURING RADIATION DETECTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18588312 titled 'RADIATION DETECTOR, RADIATION IMAGING SYSTEM, AND METHOD FOR MANUFACTURING RADIATION DETECTOR
Simplified Explanation
The patent application describes a radiation detector with a detection substrate containing a semiconductor layer and a resin layer, along with a circuit board. The detector has a detection region with a radiation detection element in the semiconductor layer and a peripheral region outside the detection region. The circuit board supports the detection substrate in the peripheral region, and the resin layer is thinner than the semiconductor layer in the detection region.
- The radiation detector includes a detection substrate with a semiconductor layer and a resin layer.
- A circuit board supports the detection substrate in the peripheral region.
- The resin layer is thinner than the semiconductor layer in the detection region.
- The detection element is provided in the semiconductor layer in the detection region.
- The circuit board supports the detection substrate in the peripheral region.
Potential Applications
This technology can be used in various industries such as medical imaging, security screening, and nuclear power plants for detecting and measuring radiation levels accurately.
Problems Solved
This technology addresses the need for precise and reliable radiation detection in various applications where safety and security are paramount.
Benefits
The benefits of this technology include improved accuracy in radiation detection, enhanced safety measures, and better monitoring of radiation levels in different environments.
Commercial Applications
"Radiation Detector with Semiconductor and Resin Layers" can be utilized in medical facilities for imaging, security checkpoints for screening, and nuclear power plants for monitoring radiation levels, enhancing safety and security measures.
Questions about Radiation Detector with Semiconductor and Resin Layers
How does the thickness of the resin layer impact the performance of the radiation detector?
The thickness of the resin layer affects the sensitivity and accuracy of the radiation detector, as it plays a crucial role in shielding and detecting radiation.
What are the potential cost implications of implementing this technology in various industries?
The cost implications of using this technology in different industries may vary depending on the scale of implementation, but the benefits of improved safety and accuracy could outweigh the initial investment.
Original Abstract Submitted
A radiation detector includes a detection substrate including a semiconductor layer and a resin layer, and a circuit board. The detection substrate includes a detection region in which a detection element of radiation is provided in the semiconductor layer, and a peripheral region provided outside the detection region. In at least a part of the peripheral region of the detection substrate, the circuit board supports a second main surface opposite to a first main surface of the detection substrate on which the radiation is incident. The resin layer is provided in at least the detection region on at least one of the first main surface and the second main surface of the detection substrate, and a thickness of the resin layer in the detection region is smaller than a thickness of the semiconductor layer in the detection region.
