18588308. SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)

SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL

Organization Name

TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor(s)

Akiyoshi Horiai of Nisshin-shi (JP)

Takeshi Okamoto of Nisshin-shi (JP)

Takahiro Kanda of Nisshin-shi (JP)

Norihiro Hoshino of Chiyoda-ku (JP)

Kiyoshi Betsuyaku of Chiyoda-ku (JP)

Isaho Kamata of Chiyoda-ku (JP)

Hidekazu Tsuchida of Chiyoda-ku (JP)

Takashi Kanemura of Nisshin-shi (JP)

SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL - A simplified explanation of the abstract

This abstract first appeared for US patent application 18588308 titled 'SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL

The manufacturing method of a silicon carbide single crystal involves growing the crystal on a seed crystal's surface by supplying a supply gas containing a raw material gas of silicon carbide and maintaining a high temperature environment of 2500°C or higher.

• Controlling temperature distribution in a radial direction around the central axis of the seed crystal.
• Ensuring the silicon carbide single crystal meets a radial direction temperature condition of ΔT≥10°C on the seed crystal's surface and growth surface during the crystal's growth.

• • Potential Applications:**

- Semiconductor industry for high-power devices. - Aerospace industry for high-temperature applications. - Automotive industry for components requiring high thermal conductivity.

• • Problems Solved:**

- Achieving high-quality silicon carbide single crystals. - Controlling temperature distribution during crystal growth.

• • Benefits:**

- Enhanced performance of electronic devices. - Improved thermal conductivity. - Increased durability in high-temperature environments.

• • Commercial Applications:**

Title: High-Performance Silicon Carbide Single Crystals for Semiconductor and Aerospace Industries This technology can be used in the production of high-power electronic devices, aerospace components, and automotive parts requiring superior thermal properties.

• • Prior Art:**

Prior research has focused on improving the growth process of silicon carbide single crystals to enhance their quality and properties.

• • Frequently Updated Research:**

Ongoing research aims to optimize the manufacturing method further for increased efficiency and crystal quality.

• • Questions about Silicon Carbide Single Crystal Manufacturing:**

1. How does the high-temperature environment impact the quality of silicon carbide single crystals? 2. What are the key challenges in controlling temperature distribution during crystal growth?

Original Abstract Submitted

A manufacturing method of a silicon carbide single crystal includes growing the silicon carbide single crystal on a surface of a seed crystal by supplying a supply gas including a raw material gas of silicon carbide to the surface of the seed crystal and controlling an environment so that at least a part inside the heating vessel is 2500° C. or higher. The growing the silicon carbide single crystal includes controlling a temperature distribution ΔT in a radial direction centering on central axis of the seed crystal and the silicon carbide single crystal satisfies a radial direction temperature condition of ΔT≤10° ° C. on the surface of the seed crystal before the growing of the silicon carbide single crystal and on a growth surface of the silicon carbide single crystal during the growing of the silicon carbide single crystal.