18588308. SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL simplified abstract (DENSO CORPORATION)

SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL

Organization Name

DENSO CORPORATION

Inventor(s)

Akiyoshi Horiai of Nisshin-shi (JP)

Takeshi Okamoto of Nisshin-shi (JP)

Takahiro Kanda of Nisshin-shi (JP)

Norihiro Hoshino of Chiyoda-ku (JP)

Kiyoshi Betsuyaku of Chiyoda-ku (JP)

Isaho Kamata of Chiyoda-ku (JP)

Hidekazu Tsuchida of Chiyoda-ku (JP)

Takashi Kanemura of Nisshin-shi (JP)

SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL - A simplified explanation of the abstract

This abstract first appeared for US patent application 18588308 titled 'SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL

The manufacturing method of a silicon carbide single crystal involves growing the crystal on a seed crystal's surface by supplying a supply gas containing a raw material gas of silicon carbide and maintaining a high temperature environment of 2500°C or higher.

• The method controls the temperature distribution in a radial direction around the central axis of the seed crystal, ensuring a temperature condition of ΔT≥10°C on the seed crystal's surface and the growth surface of the silicon carbide single crystal.

• This process results in the production of high-quality silicon carbide single crystals with precise temperature control.

• The method allows for the growth of silicon carbide single crystals with superior structural integrity and purity.

• By optimizing temperature distribution, the method enhances the overall quality and properties of the silicon carbide single crystal.

Potential Applications: - Semiconductor industry for high-power devices - Aerospace industry for high-temperature applications - Energy sector for efficient power transmission

Problems Solved: - Ensures precise temperature control for the growth of silicon carbide single crystals - Improves the structural integrity and purity of the crystals

Benefits: - High-quality silicon carbide single crystals with superior properties - Enhanced performance in various high-temperature applications - Increased efficiency in power transmission systems

Commercial Applications: Title: Advanced Silicon Carbide Single Crystal Manufacturing Method This technology can be utilized in the semiconductor, aerospace, and energy industries for the production of high-performance devices and components.

Prior Art: Researchers have explored various methods for growing silicon carbide single crystals, but this method stands out for its precise temperature control and resulting crystal quality.

Frequently Updated Research: Ongoing research focuses on further optimizing the growth process of silicon carbide single crystals to enhance their properties and applications.

Questions about Silicon Carbide Single Crystal Manufacturing Method:

1. How does the method ensure precise temperature control during crystal growth? The method controls the temperature distribution in a radial direction around the seed crystal, ensuring uniform heating and high-quality crystal growth.

2. What are the key advantages of using silicon carbide single crystals in high-temperature applications? Silicon carbide single crystals offer superior thermal conductivity, mechanical strength, and chemical stability, making them ideal for high-temperature environments.

Original Abstract Submitted

A manufacturing method of a silicon carbide single crystal includes growing the silicon carbide single crystal on a surface of a seed crystal by supplying a supply gas including a raw material gas of silicon carbide to the surface of the seed crystal and controlling an environment so that at least a part inside the heating vessel is 2500° C. or higher. The growing the silicon carbide single crystal includes controlling a temperature distribution ΔT in a radial direction centering on central axis of the seed crystal and the silicon carbide single crystal satisfies a radial direction temperature condition of ΔT≤10° ° C. on the surface of the seed crystal before the growing of the silicon carbide single crystal and on a growth surface of the silicon carbide single crystal during the growing of the silicon carbide single crystal.