18587622. GATE ISOLATION STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
GATE ISOLATION STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Jia-Chuan You of Taoyuan County (TW)
Chia-Hao Chang of Hsinchu City (TW)
Kuo-Cheng Chiang of Hsinchu County (TW)
Kuan-Lun Cheng of Hsin-Chu (TW)
Chih-Hao Wang of Hsinchu County (TW)
GATE ISOLATION STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18587622 titled 'GATE ISOLATION STRUCTURE
The semiconductor device described in the abstract consists of a first gate structure, a second gate structure aligned in a specific direction, a first metal layer over the first gate structure, a second metal layer over the second gate structure, and a gate isolation structure extending between the first gate structure and the second gate structure, as well as between the first metal layer and the second metal layer.
- The device features a unique design with two gate structures aligned along a specific direction.
- The presence of first and second metal layers over the gate structures enhances conductivity and performance.
- The gate isolation structure effectively separates the gate structures and metal layers, preventing interference and ensuring proper functionality.
Potential Applications: This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as integrated circuits, microprocessors, and memory chips.
Problems Solved: The device addresses issues related to gate structure alignment, metal layer deposition, and isolation between components, improving overall performance and reliability.
Benefits: Enhanced conductivity, improved performance, reduced interference, and increased reliability in semiconductor devices.
Commercial Applications: This technology can be utilized in the production of high-performance electronic devices, contributing to advancements in the semiconductor industry and various electronic applications.
Prior Art: Researchers can explore prior art related to semiconductor device design, gate structures, metal layer deposition, and isolation techniques in semiconductor manufacturing processes.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor device technology, gate structure design, metal layer deposition methods, and isolation techniques for improved performance and reliability.
Questions about Semiconductor Device Technology: 1. What are the key features of the semiconductor device described in the abstract? 2. How does the gate isolation structure contribute to the functionality of the device?
Original Abstract Submitted
A semiconductor device according to the present disclosure includes a first gate structure and a second gate structure aligned along a direction, a first metal layer disposed over the first gate structure, a second metal layer disposed over the second gate structure, and a gate isolation structure extending between the first gate structure and the second gate structure as well as between the first metal layer and the second metal layer.
