18587593. MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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MEMORY DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Jun-Shen Wu of Hsinchu City (TW)

Chi-En Wang of Hsinchu City (TW)

Ren-Shuo Liu of Hsinchu City (TW)

MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18587593 titled 'MEMORY DEVICE

The memory device described in the patent application includes a memory array and a selection circuit. The memory array contains at least one first faulty cell and at least one second faulty cell, each storing data corresponding to different fields of a floating-point number. The selection circuit identifies the faulty cells based on the priority of a cell replacement operation, with the first faulty cell having a higher priority than the second faulty cell. The selection circuit then outputs the fault address of the first faulty cell to a redundancy analyzer circuit for replacement.

  • The memory device includes a memory array and a selection circuit.
  • The memory array contains at least one first faulty cell and at least one second faulty cell.
  • The faulty cells store data corresponding to different fields of a floating-point number.
  • The selection circuit identifies the faulty cells based on the priority of a cell replacement operation.
  • The first faulty cell has a higher priority than the second faulty cell.
  • The selection circuit outputs the fault address of the first faulty cell for replacement.

Potential Applications: - Faulty cell replacement in memory devices - Enhancing the reliability of memory arrays - Improving the performance of floating-point number storage systems

Problems Solved: - Efficient identification and replacement of faulty cells in memory arrays - Ensuring accurate storage of data in floating-point number fields - Enhancing the overall reliability of memory devices

Benefits: - Increased reliability and performance of memory arrays - Minimized data corruption risks in floating-point number storage - Improved longevity of memory devices

Commercial Applications: Title: "Advanced Faulty Cell Replacement Technology for Memory Devices" This technology can be utilized in various industries such as: - Consumer electronics - Data centers - Aerospace and defense - Automotive sector

Questions about the technology: 1. How does the selection circuit prioritize the replacement of faulty cells in the memory array? 2. What are the potential implications of using this technology in data centers for improving data storage reliability?


Original Abstract Submitted

A memory device is provided, including a memory array and a selection circuit. At least one first faulty cell and at least one second faulty cell that are in the memory array store data corresponding to, respectively, first and second fields of a floating-point number. The selection circuit identifies the at least one first faulty cell and the at least one second faulty cell based on a priority of a cell replacement operation which indicates that a priority of the at least one first faulty cell is higher than that of the at least one second faulty cell. The selection circuit further outputs a fault address of the at least one first faulty cell to a redundancy analyzer circuit for replacing the at least one first faulty cell.

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