18587335. SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (FUJI ELECTRIC CO., LTD.)
Contents
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Tomohiro Moriya of Matsumoto-city (JP)
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18587335 titled 'SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
The SiC semiconductor device described in the abstract enables ohmic contact between the main region and the main electrode while suppressing large surface irregularities in other regions.
- The device includes an active part and a voltage-withstanding structure part, with a drift layer made of SiC.
- It features a base region made of SiC on the top face side of the drift layer in the active part.
- Main regions made of SiC are provided on the top face side of the base region, containing a 3C structure in at least the top face portion.
- A channel stopper region made of SiC with a 4H structure is provided on the top face side of the drift layer in the voltage-withstanding structure part.
- The device also includes an insulated gate electrode structure and an inorganic insulating film on the top face of the channel stopper region.
Potential Applications: - Power electronics - High-temperature applications - Electric vehicles
Problems Solved: - Achieving ohmic contact in a SiC semiconductor device - Suppressing surface irregularities
Benefits: - Improved performance and reliability - Enhanced efficiency in power applications - Extended lifespan of the device
Commercial Applications: Title: Advanced SiC Semiconductor Devices for Power Electronics This technology can be utilized in various industries such as electric vehicles, renewable energy systems, and industrial power supplies. The market implications include increased efficiency, reduced energy consumption, and improved overall performance.
Questions about SiC Semiconductor Devices: 1. How does the 3C structure in the main regions contribute to the performance of the device? 2. What are the specific advantages of using SiC in power electronics applications?
Frequently Updated Research: Researchers are continuously exploring new ways to enhance the performance and efficiency of SiC semiconductor devices, particularly in high-power applications and extreme environments. Stay updated on the latest advancements in SiC technology for power electronics.
Original Abstract Submitted
Provided is a SiC semiconductor device that enables ohmic contact between the main region and the main electrode and can suppress large surface irregularities in other regions. The SiC semiconductor device includes, an active part and a voltage withstanding structure part and includes a drift layer formed of SiC; a base region formed of SiC and provided on the top face side of the drift layer in the active part; main regions formed of Sic, provided on the top face side of the base region, and containing a 3C structure in at least the top face portion thereof; a channel stopper region formed of SiC with a 4H structure and provided on the top face side of the drift layer in the voltage withstanding structure part; an insulated gate electrode structure; and an inorganic insulating film provided on the top face of the channel stopper region.
