18587221. METHOD AND DEVICE FOR PRODUCING A LOW-DEFECT INTERFACE simplified abstract (Robert Bosch GmbH)
Contents
METHOD AND DEVICE FOR PRODUCING A LOW-DEFECT INTERFACE
Organization Name
Inventor(s)
Christian Huber of Ludwigsburg (DE)
Jens Baringhaus of Sindelfingen (DE)
METHOD AND DEVICE FOR PRODUCING A LOW-DEFECT INTERFACE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18587221 titled 'METHOD AND DEVICE FOR PRODUCING A LOW-DEFECT INTERFACE
Simplified Explanation: This patent application describes a method for creating a high-quality interface between a GaN semiconductor substrate and a gate dielectric in a GaN power transistor. The method involves specific temperature steps and the introduction of reactive and inert mediums to generate the gate dielectric on the substrate.
- Heating the GaN semiconductor substrate to specific temperatures
- Introducing reactive and inert mediums at different stages
- Generating a gate dielectric on the GaN semiconductor substrate
Key Features and Innovation:
- Controlled temperature steps for creating a low-defect interface
- Use of reactive and inert mediums for gate dielectric formation
- Improved quality and performance of GaN power transistors
Potential Applications:
- Power electronics
- Semiconductor manufacturing
- High-frequency applications
Problems Solved:
- Poor interface quality between GaN semiconductor and gate dielectric
- Defects in GaN power transistors
- Inconsistent performance in high-power applications
Benefits:
- Enhanced reliability and performance of GaN power transistors
- Improved efficiency in power electronics
- Better overall functionality in high-frequency applications
Commercial Applications: Potential commercial applications include:
- Power supply units
- RF amplifiers
- Electric vehicles
Prior Art: Readers can explore prior research on GaN semiconductor manufacturing processes and gate dielectric deposition techniques to understand the evolution of this technology.
Frequently Updated Research: Stay updated on advancements in GaN semiconductor technology, gate dielectric materials, and power transistor design for the latest innovations in this field.
Questions about GaN Power Transistor Interface: 1. What are the key challenges in creating a high-quality interface between GaN semiconductor substrates and gate dielectrics? 2. How does the use of specific temperature steps and reactive/inert mediums improve the interface quality in GaN power transistors?
Original Abstract Submitted
A method for producing a low-defect interface between a GaN semiconductor substrate and a gate dielectric of a GaN power transistor. The method includes: introducing at least one GaN semiconductor substrate into a device; generating a vacuum within the device; heating the device to a first temperature; performing a first temperature step at the first temperature, wherein a reactive medium is introduced into the device and has a first partial pressure; performing a second temperature step at a second temperature, wherein an inert medium is introduced into the device and has a second partial pressure, and generating the gate dielectric on the GaN semiconductor substrate.
