18587122. RESIDUE-FREE METAL GATE CUTTING FOR FIN-LIKE FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

RESIDUE-FREE METAL GATE CUTTING FOR FIN-LIKE FIELD EFFECT TRANSISTOR

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Ya-Yi Tsai of Hsinchu (TW)

Yi-Hsuan Hsiao of Hsinchu (TW)

Shu-Yuan Ku of Hsinchu County (TW)

Ryan Chia-Jen Chen of Chiayi City (TW)

Ming-Ching Chang of Hsinchu City (TW)

RESIDUE-FREE METAL GATE CUTTING FOR FIN-LIKE FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18587122 titled 'RESIDUE-FREE METAL GATE CUTTING FOR FIN-LIKE FIELD EFFECT TRANSISTOR

Simplified Explanation

This patent application discloses techniques for cutting metal gates in FinFETs, a type of field-effect transistor. The method involves forming openings in a patterning layer to expose portions of gate structures and dielectric layers, then removing these exposed portions.

• Metal gate cutting techniques for FinFETs
• Method involves forming openings in a patterning layer
• Exposes portions of gate structures and dielectric layers
• Removal of exposed portions

Potential Applications

• Semiconductor manufacturing
• Integrated circuit fabrication
• Electronics industry

Problems Solved

• Precise cutting of metal gates in FinFETs
• Ensuring proper functionality of transistors
• Enhancing performance of integrated circuits

Benefits

• Improved transistor performance
• Enhanced reliability of integrated circuits
• Increased efficiency in semiconductor manufacturing

Commercial Applications

Metal Gate Cutting Techniques for FinFETs: Enhancing Semiconductor Manufacturing Efficiency This technology can be utilized in the production of advanced integrated circuits, leading to more reliable and efficient electronic devices. The market implications include improved competitiveness for semiconductor manufacturers and enhanced performance for end-users.

Prior Art

For prior art related to metal gate cutting techniques in FinFETs, researchers can explore patents and publications in the field of semiconductor fabrication, specifically focusing on innovations in transistor design and manufacturing processes.

Frequently Updated Research

Researchers in the semiconductor industry are constantly exploring new methods and materials to improve the performance and efficiency of integrated circuits. Stay updated on the latest advancements in FinFET technology to ensure competitiveness in the market.

Questions about Metal Gate Cutting Techniques for FinFETs

How do metal gate cutting techniques impact the performance of FinFETs?

Metal gate cutting techniques play a crucial role in ensuring the precise operation of FinFETs, ultimately enhancing their performance and reliability.

What are the key considerations in implementing metal gate cutting techniques in semiconductor manufacturing?

Implementing metal gate cutting techniques requires careful planning and execution to maintain the integrity and functionality of the transistors.

Original Abstract Submitted

Metal gate cutting techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes receiving an integrated circuit (IC) device structure that includes a substrate, one or more fins disposed over the substrate, a plurality of gate structures disposed over the fins, a dielectric layer disposed between and adjacent to the gate structures, and a patterning layer disposed over the gate structures. The gate structures traverses the fins and includes first and second gate structures. The method further includes: forming an opening in the patterning layer to expose a portion of the first gate structure, a portion of the second gate structure, and a portion of the dielectric layer; and removing the exposed portion of the first gate structure, the exposed portion of the second gate structure, and the exposed portion of the dielectric layer.