18586860. SUBSTRATE SUPPORT AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
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SUBSTRATE SUPPORT AND SUBSTRATE PROCESSING APPARATUS
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SUBSTRATE SUPPORT AND SUBSTRATE PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18586860 titled 'SUBSTRATE SUPPORT AND SUBSTRATE PROCESSING APPARATUS
The patent application describes a substrate support system for a plasma processing chamber, consisting of a base connected to a power supply, a first dielectric with a substrate support surface, and a second dielectric with a ring support surface.
- The first dielectric contains a heat transfer gas diffusion space, a first electrode, and a conductor connecting the electrode to the base.
- The second dielectric includes a heat transfer gas diffusion space, a second electrode connected to a power supply with a common voltage with the base.
- Key Features and Innovation:**
- Dual dielectric design for improved heat transfer and plasma processing efficiency.
- Separate heat transfer gas diffusion spaces for each dielectric layer.
- Common voltage connection between the second electrode and the base for consistent plasma processing.
- Potential Applications:**
- Semiconductor manufacturing
- Thin film deposition
- Surface modification processes
- Problems Solved:**
- Enhanced heat transfer efficiency
- Improved plasma processing uniformity
- Increased substrate support stability
- Benefits:**
- Higher quality film deposition
- Faster processing times
- Reduced energy consumption
- Commercial Applications:**
- Advanced semiconductor fabrication processes
- High-throughput thin film coating systems
- Precision surface modification equipment
- Questions about the Technology:**
1. How does the dual dielectric design impact plasma processing efficiency? 2. What are the specific advantages of the common voltage connection between the second electrode and the base?
Original Abstract Submitted
A substrate support disposed inside a plasma processing chamber includes a base electrically connected to at least one power supply, a first dielectric disposed on the base and having a substrate support surface, and a second dielectric disposed on the base to surround the first dielectric and having a ring support surface, wherein the first dielectric includes therein a first heat transfer gas diffusion space, a first electrode disposed above the first heat transfer gas diffusion space, and a conductor that electrically connects the first electrode and the base, and wherein the second dielectric includes therein a second heat transfer gas diffusion space, and a second electrode disposed above the second heat transfer gas diffusion space and electrically connected to a power supply that outputs a common voltage with the base.
