18586425. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF SEPARATING SUBSTRATE simplified abstract (KIOXIA CORPORATION)
Contents
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF SEPARATING SUBSTRATE
Organization Name
Inventor(s)
Mariko Sumiya of Yokkaichi Mie (JP)
Takuro Okubo of Yokkaichi Mie (JP)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF SEPARATING SUBSTRATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18586425 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF SEPARATING SUBSTRATE
In one embodiment, a method of manufacturing a semiconductor device includes forming a first insulator or a first conductor layer on a first substrate, forming a porous layer on the first insulator or the first conductor layer, forming a first film including a first device above the porous layer, and forming a second film including a second device on a second substrate. The method further includes bonding the first substrate and the second substrate to sandwich the first insulator or the first conductor layer, the porous layer, the first film, and the second film. The method further includes separating the first substrate and the second substrate such that the first insulator or the first conductor layer and a first portion of the porous layer remain above the first substrate, and a second portion of the porous layer remains above the second substrate.
- Method of manufacturing a semiconductor device involving multiple layers and substrates.
- Formation of insulator or conductor layers on substrates.
- Inclusion of porous layers in the device structure.
- Bonding of substrates to sandwich the layers and films.
- Separation of substrates to leave portions of layers on each substrate.
Potential Applications: - Semiconductor manufacturing industry - Electronics industry - Research and development in semiconductor technology
Problems Solved: - Efficient manufacturing of semiconductor devices - Integration of multiple devices in a single structure - Enhanced performance and functionality of semiconductor devices
Benefits: - Improved device performance - Cost-effective manufacturing process - Increased device integration capabilities
Commercial Applications: Potential commercial applications include the production of advanced semiconductor devices for various electronic products, such as smartphones, computers, and other consumer electronics. This technology could also be utilized in research institutions and semiconductor manufacturing companies to develop cutting-edge devices.
Prior Art: Researchers and engineers in the semiconductor industry may find relevant prior art in the field of semiconductor device manufacturing, specifically in the areas of device integration and substrate bonding techniques.
Frequently Updated Research: Ongoing research in semiconductor device manufacturing focuses on improving device performance, reducing manufacturing costs, and increasing device integration capabilities. Researchers are exploring new materials and processes to enhance the functionality of semiconductor devices.
Questions about Semiconductor Device Manufacturing: 1. How does the method of bonding substrates impact the overall device performance? 2. What are the potential challenges in separating the substrates after bonding them in the manufacturing process?
Original Abstract Submitted
In one embodiment, a method of manufacturing a semiconductor device includes forming a first insulator or a first conductor layer on a first substrate, forming a porous layer on the first insulator or the first conductor layer, forming a first film including a first device, above the porous layer, and forming a second film including a second device, on a second substrate. The method further includes bonding the first substrate and the second substrate to sandwich the first insulator or the first conductor layer, the porous layer, the first film, and the second film. The method further includes separating the first substrate and the second substrate such that the first insulator or the first conductor layer and a first portion of the porous layer remain above the first substrate, and a second portion of the porous layer remains above the second substrate.
