18586366. SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yuya Kiyomura of Kuwana Mie (JP)
Ayako Kawanishi of Yokkaichi Mie (JP)
Yuta Taguchi of Yokkaichi Mie (JP)
Ayumi Watarai of Ama Aichi (JP)
Ippei Kume of Yokkaichi Mie (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18586366 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation: The memory device described in the patent application consists of two chips, each with electrodes made of conductive films. The first electrode has different copper orientation ratios in different portions.
- The memory device includes two chips with electrodes made of conductive films.
- The first electrode has a boundary region with the second electrode, a first surface, a second surface, and a third surface.
- The first portion of the first surface has a higher copper orientation ratio than the second portion.
- A second conductive film covers the second and third surfaces of the first electrode.
Key Features and Innovation:
- Memory device with two chips and electrodes made of conductive films.
- Variation in copper orientation ratios within the first electrode.
- Second conductive film covering specific surfaces of the first electrode.
Potential Applications:
- Memory devices in electronic devices.
- Data storage applications.
- Integrated circuits.
Problems Solved:
- Enhancing memory device performance.
- Improving data storage efficiency.
- Ensuring reliable data retention.
Benefits:
- Higher performance memory devices.
- Increased data storage capacity.
- Enhanced reliability in data retention.
Commercial Applications: Memory devices with improved performance can be used in various electronic devices, data storage systems, and integrated circuits, leading to more efficient and reliable data storage solutions in the market.
Questions about Memory Devices: 1. How does the variation in copper orientation ratios within the first electrode impact the overall performance of the memory device? 2. What are the potential challenges in implementing this technology in commercial memory devices?
Frequently Updated Research: Stay updated on advancements in memory device technology, particularly in the optimization of copper orientation ratios for improved performance and efficiency.
Original Abstract Submitted
A memory device includes a first chip including a first electrode and a second chip including a second electrode. The first electrode includes a first conductive film having a first surface in contact with the second electrode at a boundary region of the first and second electrodes, a second surface spaced apart from the boundary region, and a third surface between the first surface and the second surface, and having a first portion on the first surface side and a second portion on the second surface side, and includes a second conductive film covering the second surface and the third surface of the first conductive film. A (111) orientation ratio of copper contained in the first portion is higher than a (111) orientation ratio of copper contained in the second portion.
