18585422. NANOSHEET SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

NANOSHEET SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chien-Chang Su of Hsinchu (TW)

Yan-Ting Lin of Hsinchu (TW)

Chien-Wei Lee of Hsinchu (TW)

Bang-Ting Yan of Hsinchu (TW)

Chih Teng Hsu of Hsinchu (TW)

Chih-Chiang Chang of Hsinchu (TW)

Chien-I Kuo of Hsinchu (TW)

Chii-Horng Li of Hsinchu (TW)

Yee-Chia Yeo of Hsinchu (TW)

NANOSHEET SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18585422 titled 'NANOSHEET SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

The patent application describes a method for manufacturing a nanosheet semiconductor device, involving several key steps such as forming a poly gate on a nanosheet stack, recessing the nanosheet stack to create a source/drain recess, forming an inner spacer, and selectively etching the nanosheets.

• Formation of a poly gate on a nanosheet stack with alternating first and second nanosheets.
• Recessing the nanosheet stack to create a source/drain recess near the poly gate.
• Formation of an inner spacer to cover the first nanosheet laterally.
• Selective etching of the second nanosheet to achieve desired device characteristics.

Potential Applications: - Advanced semiconductor manufacturing processes. - Development of high-performance nanosheet semiconductor devices.

Problems Solved: - Enhanced control over device characteristics. - Improved performance and efficiency of semiconductor devices.

Benefits: - Increased device performance. - Greater control over device properties. - Potential for smaller, more efficient devices.

Commercial Applications: - Semiconductor industry for the production of advanced electronic devices. - Research and development in nanotechnology and semiconductor manufacturing.

Questions about Nanosheet Semiconductor Device Manufacturing: 1. How does the method of forming a poly gate on a nanosheet stack improve device performance? 2. What are the advantages of selectively etching the second nanosheet in the manufacturing process?

Original Abstract Submitted

A method for manufacturing a nanosheet semiconductor device includes forming a poly gate on a nanosheet stack which includes at least one first nanosheet and at least one second nanosheet alternating with the at least one first nanosheet; recessing the nanosheet stack to form a source/drain recess proximate to the poly gate; forming an inner spacer laterally covering the at least one first nanosheet; and selectively etching the at least one second nanosheet.