18585211. Interconnect Layout for Semiconductor Device simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

Interconnect Layout for Semiconductor Device

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chun-Hsiung Tsai of Xinpu Township (TW)

Shahaji B. More of Hsinchu (TW)

Yu-Ming Lin of Hsinchu (TW)

Clement Hsingjen Wann of Carmel NY (US)

Interconnect Layout for Semiconductor Device - A simplified explanation of the abstract

This abstract first appeared for US patent application 18585211 titled 'Interconnect Layout for Semiconductor Device

Simplified Explanation

The patent application describes a semiconductor device with a deep trench capacitor and an interconnect structure, including a seal ring structure, a conductive via, and a conductive line.

• The semiconductor device includes a substrate, a deep trench capacitor (DTC), and an interconnect structure.
• The interconnect structure consists of a seal ring structure, a conductive via, and a conductive line.
• The seal ring structure is in electrical contact with the substrate.
• The conductive via is in electrical contact with the DTC.
• The conductive line electrically couples the seal ring structure to the conductive via.

Key Features and Innovation

• Integration of a deep trench capacitor within the substrate.
• Inclusion of a seal ring structure for electrical contact with the substrate.
• Utilization of a conductive via to connect with the deep trench capacitor.
• Implementation of a conductive line to couple the seal ring structure with the conductive via.

Potential Applications

The technology can be applied in the semiconductor industry for various electronic devices requiring efficient interconnect structures.

Problems Solved

The technology addresses the need for improved interconnect structures in semiconductor devices, enhancing their performance and reliability.

Benefits

• Enhanced electrical connectivity within the semiconductor device.
• Improved efficiency and reliability of the interconnect structure.
• Potential for increased performance of electronic devices.

Commercial Applications

• Semiconductor manufacturing industry for electronic devices.
• Consumer electronics market for improved performance and reliability.
• Telecommunications industry for enhanced connectivity in electronic components.

Prior Art

Readers can explore prior patents related to semiconductor interconnect structures and deep trench capacitors to understand the evolution of similar technologies.

Frequently Updated Research

Stay updated on advancements in semiconductor interconnect technologies and deep trench capacitors to leverage the latest innovations in the field.

Questions about Semiconductor Device

What are the key components of the semiconductor device described in the patent application?

The key components include a substrate, a deep trench capacitor, an interconnect structure with a seal ring structure, a conductive via, and a conductive line.

How does the technology improve the performance of electronic devices?

The technology enhances electrical connectivity and reliability within semiconductor devices, leading to improved overall performance.

Original Abstract Submitted

A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a deep trench capacitor (DTC) having a portion within the substrate, and an interconnect structure over the DTC and the substrate. The interconnect structure includes a seal ring structure in electrical contact with the substrate, a first conductive via in electrical contact with the DTC, and a first conductive line electrically coupling the seal ring structure to the first conductive via.