18584862. GATE ALL AROUND TRANSISTOR WITH DUAL INNER SPACERS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

GATE ALL AROUND TRANSISTOR WITH DUAL INNER SPACERS

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Zhi-Chang Lin of Hsinchu (TW)

Kuan-Ting Pan of Hsinchu (TW)

Shih-Cheng Chen of Hsinchu (TW)

Jung-Hung Chang of Hsinchu (TW)

Lo-Heng Chang of Hsinchu (TW)

Chien-Ning Yao of Hsinchu (TW)

Kuo-Cheng Chiang of Hsinchu (TW)

GATE ALL AROUND TRANSISTOR WITH DUAL INNER SPACERS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18584862 titled 'GATE ALL AROUND TRANSISTOR WITH DUAL INNER SPACERS

The abstract describes a method for forming a gate all around transistor by utilizing semiconductor nanosheets and various spacers.

• Formation of semiconductor nanosheets is a key step in the process.
• Cladding inner spacer is formed between the source region and gate region of the transistor.
• Sheet inner spacers are created between the semiconductor nanosheets in a separate deposition process.

Potential Applications: - Advanced semiconductor technology - Nanoelectronics - High-performance computing

Problems Solved: - Enhancing transistor performance - Improving gate control - Increasing transistor density

Benefits: - Higher efficiency in electronic devices - Better control over transistor operation - Potential for smaller and more powerful devices

Commercial Applications: Title: "Next-Generation Transistor Technology for Enhanced Performance" This technology could be applied in the development of faster and more efficient electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.

Prior Art: Readers can explore prior research on gate all around transistors, semiconductor nanosheets, and spacer technologies to gain a deeper understanding of the field.

Frequently Updated Research: Stay informed about the latest advancements in semiconductor nanosheet technology, gate all around transistors, and related innovations to keep up with the rapidly evolving industry.

Questions about Gate All Around Transistor Technology: 1. How does the use of semiconductor nanosheets improve transistor performance? 2. What are the key advantages of implementing sheet inner spacers in the transistor fabrication process?

Original Abstract Submitted

A method for forming a gate all around transistor includes forming a plurality of semiconductor nanosheets. The method includes forming a cladding inner spacer between a source region of the transistor and a gate region of the transistor. The method includes forming sheet inner spacers between the semiconductor nanosheets in a separate deposition process from the cladding inner spacer.