18584540. DIRECTIONAL SELECTIVE FILL USING HIGH DENSITY PLASMA simplified abstract (Applied Materials, Inc.)

DIRECTIONAL SELECTIVE FILL USING HIGH DENSITY PLASMA

Organization Name

Applied Materials, Inc.

Inventor(s)

Purvam Dineshbhai Modi of Sunnyvale CA (US)

Bhargav S. Citla of Fremont CA (US)

Srinivas D. Nemani of Saratoga CA (US)

Ellie Y. Yieh of San Jose CA (US)

DIRECTIONAL SELECTIVE FILL USING HIGH DENSITY PLASMA - A simplified explanation of the abstract

This abstract first appeared for US patent application 18584540 titled 'DIRECTIONAL SELECTIVE FILL USING HIGH DENSITY PLASMA

The patent application describes a method for processing semiconductor materials using plasma effluents of silicon-containing, oxygen-containing, and fluorine-containing precursors in a processing chamber.

• Providing a silicon-containing precursor to the processing region of a semiconductor processing chamber
• Depositing a silicon-containing material on a substrate in the processing region
• Forming plasma effluents of the silicon-containing precursor
• Providing an oxygen-containing precursor to the processing region and forming plasma effluents of the oxygen-containing precursor
• Contacting the silicon-containing material with the plasma effluents of the oxygen-containing precursor to form a silicon-and-oxygen-containing material
• Providing a fluorine-containing precursor to the processing region and forming plasma effluents of the fluorine-containing precursor
• Etching the silicon-and-oxygen-containing material from a feature with the plasma effluents of the fluorine-containing precursor

Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Thin film deposition processes

Problems Solved: - Efficient deposition of silicon-containing materials - Precise etching of features on substrates - Controlling the composition of deposited materials

Benefits: - Improved semiconductor device performance - Enhanced manufacturing efficiency - Precise control over material properties

Commercial Applications: - Semiconductor fabrication facilities - Electronics manufacturing companies - Research institutions in the field of microelectronics

Questions about the technology: 1. How does the use of plasma effluents improve the deposition and etching processes in semiconductor manufacturing? 2. What are the potential challenges associated with using multiple precursors in the same processing chamber for material deposition and etching?

Original Abstract Submitted

Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature. The methods may include forming plasma effluents of the silicon-containing precursor. The methods may include depositing a silicon-containing material on the substrate. The methods may include providing an oxygen-containing precursor to the processing region, forming plasma effluents of the oxygen-containing precursor, and contacting the silicon-containing material with the plasma effluents of the oxygen-containing precursor to form a silicon-and-oxygen-containing material. The methods may include providing a fluorine-containing precursor to the processing region, forming plasma effluents of the fluorine-containing precursor, and etching the silicon-and-oxygen-containing material from a top, a sidewall, or both of the feature with the plasma effluents of the fluorine-containing precursor.