18584387. SEMICONDUCTOR DEVICE INCLUDING VERTICAL TRANSISTOR WITH BACK SIDE POWER STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE INCLUDING VERTICAL TRANSISTOR WITH BACK SIDE POWER STRUCTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE INCLUDING VERTICAL TRANSISTOR WITH BACK SIDE POWER STRUCTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Semiconductor Device with Vertical Transistors and Back Side Power Structure
- 1.13 Original Abstract Submitted
SEMICONDUCTOR DEVICE INCLUDING VERTICAL TRANSISTOR WITH BACK SIDE POWER STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Shih-Wei Peng of Hsinchu City (TW)
Te-Hsin Chiu of Hsinchu City (TW)
Jiann-Tyng Tzeng of Hsin-Chu (TW)
SEMICONDUCTOR DEVICE INCLUDING VERTICAL TRANSISTOR WITH BACK SIDE POWER STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18584387 titled 'SEMICONDUCTOR DEVICE INCLUDING VERTICAL TRANSISTOR WITH BACK SIDE POWER STRUCTURE
Simplified Explanation
The patent application describes a semiconductor device with vertical transistors and a back side power structure.
Key Features and Innovation
- Gate structure with gate pad and gate contact
- Two transistors formed by source regions, drain regions, and gate structure
- Metal line below source regions, connected to power supply
Potential Applications
This technology can be used in power electronics, integrated circuits, and semiconductor devices.
Problems Solved
This innovation addresses the need for efficient power management and improved performance in semiconductor devices.
Benefits
- Enhanced power efficiency
- Improved performance
- Compact design
Commercial Applications
- Power electronics industry
- Semiconductor manufacturing companies
- Consumer electronics market
Prior Art
Readers can explore prior patents related to vertical transistors, back side power structures, and semiconductor device design.
Frequently Updated Research
Researchers are constantly developing new methods for optimizing power structures in semiconductor devices.
Questions about Semiconductor Device with Vertical Transistors and Back Side Power Structure
What are the potential applications of this semiconductor device technology?
This technology can be applied in various industries such as power electronics, integrated circuits, and semiconductor devices.
How does this innovation improve power management in semiconductor devices?
By utilizing vertical transistors and a back side power structure, this technology enhances power efficiency and overall performance in semiconductor devices.
Original Abstract Submitted
A semiconductor device including vertical transistors with a back side power structure, and methods of making the same are described. In one example, a described semiconductor structure includes: a gate structure including a gate pad and a gate contact on the gate pad; a first source region disposed below the gate pad; a first drain region disposed on the gate pad, wherein the first source region, the first drain region and the gate structure form a first transistor; a second source region disposed below the gate pad; a second drain region disposed on the gate pad, wherein the second source region, the second drain region and the gate structure form a second transistor; and at least one metal line that is below the first source region and the second source region, and is electrically connected to at least one power supply.
