18584275. Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract (Micron Technology, Inc.)
Contents
Integrated Assemblies and Methods of Forming Integrated Assemblies
Organization Name
Inventor(s)
Alyssa N. Scarbrough of Boise ID (US)
Jordan D. Greenlee of Boise ID (US)
John D. Hopkins of Meridian ID (US)
Integrated Assemblies and Methods of Forming Integrated Assemblies - A simplified explanation of the abstract
This abstract first appeared for US patent application 18584275 titled 'Integrated Assemblies and Methods of Forming Integrated Assemblies
Simplified Explanation: The patent application describes an integrated assembly with memory and conductive regions, channel-material pillars, conductive posts, a source structure, doped-semiconductor-material, and liners.
- Channel-material-pillars and conductive posts are arranged in different regions of the assembly.
- A source structure is connected to the channel-material-pillars.
- Doped-semiconductor-material is present in both regions and is part of the source structure.
- Liners surround the conductive posts and are located between the posts and the doped-semiconductor-material.
Key Features and Innovation:
- Integration of memory and conductive regions in a single assembly.
- Use of channel-material-pillars and conductive posts for electrical connections.
- Direct adjacency of doped-semiconductor-material to the source structure.
- Liners for protection and insulation of the conductive posts.
Potential Applications: This technology could be used in semiconductor manufacturing, memory devices, and integrated circuits.
Problems Solved: The technology addresses the need for efficient electrical connections and protection of components in integrated assemblies.
Benefits:
- Improved performance and reliability of integrated assemblies.
- Simplified manufacturing processes.
- Enhanced functionality of memory devices.
Commercial Applications: Potential commercial applications include the production of advanced memory devices, semiconductor components, and integrated circuits for various electronic devices.
Questions about the Technology: 1. How does the integration of memory and conductive regions benefit the overall performance of the assembly? 2. What are the specific advantages of using doped-semiconductor-material in the source structure?
Frequently Updated Research: Ongoing research in semiconductor materials and manufacturing processes may lead to further advancements in integrated assembly technology.
Original Abstract Submitted
Some embodiments include an integrated assembly having a memory region and another region adjacent the memory region. Channel-material-pillars are arranged within the memory region, and conductive posts are arranged within said other region. A source structure is coupled to lower regions of the channel-material-pillars. A panel extends across the memory region and the other region. Doped-semiconductor-material is directly adjacent to the panel within the memory region and the other region. The doped-semiconductor-material is at least part of the source structure within the memory region. Liners are directly adjacent to the conductive posts and laterally surround the conductive posts. The liners are between the conductive posts and the doped-semiconductor-material. Some embodiments include methods of forming integrated assemblies.
