18584044. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Hiroshi Nakaki of Yokkaichi Mie (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18584044 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the patent application consists of a stacked body, columnar bodies, bit lines, contacts, and dividing portions.
- The dividing portions are located separately in the third direction and divide one or more gate electrode layers in the stacked body.
- Five columnar bodies are positioned between two adjacent dividing portions, with each connected to a separate bit line.
- The innovation lies in the arrangement of the columnar bodies and bit lines, optimizing the electrical connections between them.
Potential Applications:
- This technology can be used in various memory devices such as DRAMs, SRAMs, and flash memory.
- It can also be applied in computing systems, mobile devices, and other electronic devices requiring high-speed memory.
Problems Solved:
- Efficient organization of columnar bodies and bit lines for improved memory performance.
- Enhanced reliability and stability of the semiconductor memory device.
Benefits:
- Increased data processing speed and efficiency.
- Higher memory capacity and improved data storage capabilities.
- Enhanced overall performance of electronic devices utilizing this technology.
Commercial Applications:
- The technology can be utilized in the production of advanced memory modules for consumer electronics, data centers, and industrial applications.
- It has the potential to drive innovation in the semiconductor industry and improve the competitiveness of memory device manufacturers.
Questions about the Technology: 1. How does the arrangement of columnar bodies and bit lines impact the overall performance of the semiconductor memory device? 2. What specific advantages does this technology offer compared to traditional memory device designs?
Frequently Updated Research: Ongoing research in semiconductor materials and device fabrication techniques may lead to further advancements in memory device technology, potentially enhancing the capabilities of the described innovation.
Original Abstract Submitted
A semiconductor memory device includes a stacked body, a plurality of columnar bodies, a plurality of bit lines, a plurality of contacts, and a plurality of dividing portions. The plurality of dividing portions is located separately in the third direction, each extending in the first direction in the stacked body, and dividing one or more gate electrode layers including the lowermost layer of the plurality of gate electrode layers in the third direction, when the one side is the lower side. The plurality of columnar bodies includes five columnar bodies provided in a region between two adjacent dividing portions among the plurality of dividing portions. Regarding each columnar body provided in the five columnar bodies, a separate bit line provided in the plurality of bit lines is present between a bit line provided in the plurality of bit lines and electrically connected to the columnar body, and each bit line provided in the plurality of bit lines and electrically connected to a columnar body adjacent to that columnar body at the shortest interval among the five columnar bodies.
