18584028. FORMING A CAVITY WITH A WET ETCH FOR BACKSIDE CONTACT FORMATION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

FORMING A CAVITY WITH A WET ETCH FOR BACKSIDE CONTACT FORMATION

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Yi-Hsiu Chen of Taipei City (TW)

Andrew Joseph Kelly of Hengshan Township (TW)

FORMING A CAVITY WITH A WET ETCH FOR BACKSIDE CONTACT FORMATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18584028 titled 'FORMING A CAVITY WITH A WET ETCH FOR BACKSIDE CONTACT FORMATION

The patent application describes an integrated chip with a unique structure involving channel structures, gate electrodes, upper interconnect contacts, and backside contacts.

• The chip includes a channel structure connecting two source/drain regions.
• A gate electrode is positioned directly over the channel structures.
• An upper interconnect contact is placed over and connected to the gate electrode.
• A backside contact is located below and connected to the first source/drain region.
• The backside contact has a width that decreases from the bottom to the top surface.

Potential Applications: - Semiconductor devices - Integrated circuits - Electronics manufacturing

Problems Solved: - Improved performance and efficiency of integrated chips - Enhanced connectivity and signal transmission

Benefits: - Higher functionality in electronic devices - Increased speed and reliability - Cost-effective manufacturing processes

Commercial Applications: Title: "Advanced Integrated Chips for Enhanced Electronics" This technology can be utilized in various industries such as telecommunications, consumer electronics, and automotive for developing high-performance electronic devices.

Questions about Integrated Chips: 1. How does the unique structure of the integrated chip improve its performance compared to traditional designs? 2. What are the potential challenges in manufacturing integrated chips with such complex structures?

Frequently Updated Research: Ongoing research focuses on optimizing the design and materials used in integrated chips to further enhance their performance and efficiency.

Original Abstract Submitted

In some embodiments, the present disclosure relates to an integrated chip that includes a channel structure extending between a first source/drain region and a second source/drain region. Further, a gate electrode is arranged directly over the channel structures, and an upper interconnect contact is arranged over and coupled to the gate electrode. A backside contact is arranged below and coupled to the first source/drain region. The backside contact has a width that decreases from a bottommost surface of the backside contact to a topmost surface of the backside contact.