18583892. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (KIOXIA CORPORATION)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Questions about Semiconductor Device Manufacturing
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Mitsuhiko Noda of Kuwana Mie (JP)
Saori Kashiwada of Yokkaichi Mie (JP)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18583892 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The method involves manufacturing a semiconductor device by forming a laser peeling film, a thermal diffusion layer, and a circuit layer on a semiconductor substrate, bonding two substrates, applying a laser beam, and peeling the substrate to transfer the circuit layer.
- Laser peeling film formed above a semiconductor substrate
- Thermal diffusion layer with high thermal conductivity inside the film
- Circuit layer with semiconductor circuit above the film
- Bonding and peeling process to transfer the circuit layer
- Laser beam applied to the back surface of the substrate
Key Features and Innovation
- Utilizes a laser peeling film and thermal diffusion layer to transfer a circuit layer between semiconductor substrates.
- The thermal diffusion layer enhances heat dissipation and conductivity.
- Enables the creation of complex semiconductor devices with improved performance.
Potential Applications
- Semiconductor manufacturing industry
- Electronics and technology sector
- Research and development in semiconductor devices
Problems Solved
- Facilitates the transfer of circuit layers between semiconductor substrates.
- Improves heat dissipation and thermal conductivity in semiconductor devices.
- Enhances the performance and functionality of complex semiconductor circuits.
Benefits
- Efficient manufacturing process for semiconductor devices
- Improved heat management and performance in circuits
- Enables the development of advanced semiconductor technologies
Commercial Applications
Commercializing this technology could revolutionize the semiconductor manufacturing industry by streamlining the process of transferring circuit layers between substrates. This innovation has the potential to enhance the performance and functionality of semiconductor devices, leading to the development of more advanced and efficient electronic products.
Questions about Semiconductor Device Manufacturing
How does the thermal diffusion layer improve heat dissipation in semiconductor devices?
The thermal diffusion layer, with a high coefficient of thermal conductivity, allows for better heat dissipation within the semiconductor device, preventing overheating and improving overall performance.
What are the potential applications of this method in the electronics industry?
This method can be applied in various sectors of the electronics industry, including semiconductor manufacturing, research and development, and the production of advanced electronic devices.
Original Abstract Submitted
According to one embodiment, a method of manufacturing a semiconductor device includes: forming a laser peeling film above a first semiconductor substrate; forming, inside the laser peeling film, a thermal diffusion layer including a member has a coefficient of thermal conductivity higher than that of the laser peeling film is distributed in a plane parallel to a front surface of the first semiconductor substrate; forming a circuit layer including a semiconductor circuit above the laser peeling film; bonding the first and a second semiconductor substrates; applying a laser beam to a back surface of the first semiconductor substrate; and peeling the first semiconductor substrate to maintain the circuit layer on a side of the second semiconductor substrate.
