18583864. SEMICONDUCTOR DEVICE, MEMORY CELL AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE, MEMORY CELL AND METHOD OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Tung-Ying Lee of Hsinchu City (TW)
Bo-Jiun Lin of Hsinchu County (TW)
Shao-Ming Yu of Hsinchu County (TW)
Yu-Chao Lin of Hsinchu City (TW)
SEMICONDUCTOR DEVICE, MEMORY CELL AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18583864 titled 'SEMICONDUCTOR DEVICE, MEMORY CELL AND METHOD OF FORMING THE SAME
The abstract describes a memory cell comprising a memory device, a connecting structure, an insulating layer, and a selector. The connecting structure is electrically connected to the memory device, while the insulating layer covers both the memory device and the connecting structure. The selector is electrically connected to the memory device, located on the insulating layer, and connected to the connecting structure by penetrating through the insulating layer.
- The memory cell includes a memory device, connecting structure, insulating layer, and selector.
- The connecting structure is electrically connected to the memory device.
- The insulating layer covers the memory device and connecting structure.
- The selector is connected to the memory device, located on the insulating layer, and penetrates through the insulating layer to connect to the connecting structure.
Potential Applications: - Memory storage devices - Integrated circuits - Electronic devices requiring memory cells
Problems Solved: - Efficient data storage - Improved electrical connections - Enhanced memory cell performance
Benefits: - Increased data storage capacity - Enhanced reliability - Improved overall device performance
Commercial Applications: Title: "Innovative Memory Cell Technology for Enhanced Data Storage" This technology can be utilized in various electronic devices such as smartphones, computers, and servers to improve data storage capabilities and overall device performance. The market implications include increased demand for more efficient memory storage solutions in the electronics industry.
Prior Art: Readers can start searching for prior art related to memory cell technology in the field of semiconductor devices, integrated circuits, and memory storage technologies.
Frequently Updated Research: Stay updated on the latest advancements in memory cell technology, semiconductor devices, and integrated circuits to understand the evolving landscape of data storage solutions.
Questions about Memory Cell Technology: 1. What are the key advantages of using memory cells with selectors in electronic devices? 2. How does the insulating layer in memory cells contribute to their performance and reliability?
Original Abstract Submitted
A memory cell includes a memory device, a connecting structure, an insulating layer and a selector. The connecting structure is disposed on and electrically connected to the memory device. The insulating layer covers the memory device and the connecting structure. The selector is located on and electrically connected to the memory device, where the selector is disposed on the insulating layer and connected to the connecting structure by penetrating through the insulating layer.
