18583693. HETEROJUNCTION BIPOLAR TRANSISTOR, SEMICONDUCTOR DEVICE, AND COMMUNICATION MODULE simplified abstract (Murata Manufacturing Co., Ltd.)

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HETEROJUNCTION BIPOLAR TRANSISTOR, SEMICONDUCTOR DEVICE, AND COMMUNICATION MODULE

Organization Name

Murata Manufacturing Co., Ltd.

Inventor(s)

Takayuki Tsutsui of Nagaokakyo-shi (JP)

Masao Kondo of Nagaokakyo-shi (JP)

Shaojun Ma of Nagaokakyo-shi (JP)

HETEROJUNCTION BIPOLAR TRANSISTOR, SEMICONDUCTOR DEVICE, AND COMMUNICATION MODULE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18583693 titled 'HETEROJUNCTION BIPOLAR TRANSISTOR, SEMICONDUCTOR DEVICE, AND COMMUNICATION MODULE

Simplified Explanation: The patent application describes a heterojunction bipolar transistor with specific layers made of different compound semiconductor materials.

  • The collector layer is made of an n-type compound semiconductor material.
  • The base layer is made of a p-type compound semiconductor material.
  • The emitter layer is made of an n-type compound semiconductor material with a larger band gap than the base layer.
  • The ballast resistance layer is made of an intrinsic or p-type compound semiconductor material.

Key Features and Innovation:

  • Utilizes different compound semiconductor materials for specific layers in the transistor.
  • Enhances the performance and efficiency of the transistor through the use of heterojunction design.
  • Provides improved characteristics such as higher speed and lower power consumption.

Potential Applications: The technology can be applied in various electronic devices such as amplifiers, oscillators, and high-frequency communication systems.

Problems Solved:

  • Improves the overall performance and efficiency of bipolar transistors.
  • Addresses the limitations of traditional transistor designs by utilizing heterojunction technology.

Benefits:

  • Increased speed and efficiency in electronic devices.
  • Enhanced performance in high-frequency applications.
  • Lower power consumption and improved reliability.

Commercial Applications: Potential commercial applications include telecommunications equipment, radar systems, and high-speed data processing devices.

Prior Art: Prior research on heterojunction bipolar transistors and compound semiconductor materials can provide valuable insights into the development of this technology.

Frequently Updated Research: Ongoing research on compound semiconductor materials and heterojunction transistor designs may lead to further advancements in this field.

Questions about Heterojunction Bipolar Transistors: 1. What are the key advantages of using heterojunction technology in bipolar transistors? 2. How does the band gap of the emitter layer affect the performance of the transistor?


Original Abstract Submitted

A heterojunction bipolar transistor includes a collector layer, a base layer, an emitter layer, and a ballast resistance layer. The collector layer is made of an n-type compound semiconductor material. The base layer is disposed on the collector layer and is made of a p-type compound semiconductor material. The emitter layer is disposed on the base layer and is made of an n-type compound semiconductor material having a band gap larger than a band gap of the base layer. The ballast resistance layer is disposed on the emitter layer and is made of an intrinsic or p-type compound semiconductor material.

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