18583574. MEMORY DEVICE simplified abstract (STMicroelectronics International N.V.)
Contents
MEMORY DEVICE
Organization Name
STMicroelectronics International N.V.
Inventor(s)
Christophe Goncalves of Puyloubier (FR)
Francois Tailliet of Fuveau (FR)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18583574 titled 'MEMORY DEVICE
The abstract of the patent application describes a memory device with a sense amplifier that includes a first inverter connected to a first transistor for pre-charging a memory cell.
- Simplified Explanation:
- The patent application is for a memory device with a sense amplifier. - The sense amplifier includes a first inverter and a first transistor for pre-charging a memory cell.
- Key Features and Innovation:
- Inclusion of a sense amplifier in the memory device. - Utilization of a first inverter and a first transistor for pre-charging memory cells.
- Potential Applications:
- Memory devices in electronic devices. - Data storage systems.
- Problems Solved:
- Efficient pre-charging of memory cells. - Improved performance of memory devices.
- Benefits:
- Faster data access. - Enhanced memory device reliability.
- Commercial Applications:
- Memory chips for computers and smartphones. - Storage devices for servers and data centers.
- Prior Art:
- Prior research on sense amplifiers in memory devices. - Studies on pre-charging techniques in memory cells.
- Frequently Updated Research:
- Ongoing advancements in memory device technology. - Research on optimizing sense amplifiers for better performance.
Questions about Memory Device Technology: 1. How does the sense amplifier improve the performance of memory devices? - The sense amplifier helps in faster reading and writing of data in memory cells by amplifying the signals.
2. What are the potential challenges in implementing sense amplifiers in memory devices? - Challenges may include power consumption and signal interference issues that need to be addressed for optimal performance.
Original Abstract Submitted
The present disclosure relates to a memory device including a sense amplifier, wherein the amplifier comprises a first inverter, wherein an input and an output of the inverter are coupled to a first transistor configured to be switched on during a step of pre-charging of a memory cell.
