18583130. CAPACITIVE MEMS DEVICE simplified abstract (Murata Manufacturing Co., Ltd.)
Contents
CAPACITIVE MEMS DEVICE
Organization Name
Murata Manufacturing Co., Ltd.
Inventor(s)
CAPACITIVE MEMS DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18583130 titled 'CAPACITIVE MEMS DEVICE
Simplified Explanation:
This patent application describes a MEMS structure with a mechanical layer containing a static electrode and a movable electrode that form a capacitor. The capacitance of the capacitor changes based on the overlap of the electrodes.
Key Features and Innovation:
- MEMS structure with a mechanical layer containing static and movable electrodes
- Capacitor formed by the electrodes with variable capacitance
- Electrodes made of first and second silicon layers directly bonded to each other
- Movable electrode in the first silicon layer, static electrode in the second silicon layer
- Separation between electrodes by a gap in the interface between the silicon layers
Potential Applications: This technology could be used in:
- Microelectromechanical systems (MEMS)
- Sensors
- Actuators
- Switches
Problems Solved:
- Precise control of capacitance in MEMS structures
- Enhanced performance of MEMS devices
- Improved reliability and durability of MEMS components
Benefits:
- Increased sensitivity and accuracy in sensors
- Higher efficiency in actuators and switches
- Longer lifespan of MEMS devices
Commercial Applications: Potential commercial uses include:
- Consumer electronics
- Automotive industry
- Aerospace applications
Prior Art: Readers can explore prior art related to MEMS structures, capacitors, and silicon bonding techniques in the field of microelectronics.
Frequently Updated Research: Stay updated on the latest advancements in MEMS technology, silicon-based capacitors, and microfabrication techniques for improved MEMS performance.
Questions about MEMS Structures with Silicon-Based Capacitors: 1. How does the direct bonding of silicon layers contribute to the performance of the MEMS structure? 2. What are the specific advantages of using silicon-based capacitors in MEMS devices compared to other materials?
Original Abstract Submitted
A MEMS structure is provided that includes a mechanical layer that extends parallel to a reference device plane. The mechanical layer is patterned to include a static electrode and a movable electrode configured to move in relation to the static electrode parallel to the reference device plane. The static electrode and the movable electrode are connected to form a capacitor having capacitance that varies according to an overlap of the static electrode and the movable electrode. The mechanical layer includes a first silicon layer and a second silicon layer. Parts of the first silicon layer and the second silicon layer are directly bonded to each other. The movable electrode is in the first silicon layer and the static electrode is in the second silicon layer. The movable electrode is separated from the static electrode by a first gap in the interface between the first and second silicon layers.
