18583059. DEPOSITION APPARATUS AND DEPOSITION METHOD simplified abstract (Tokyo Electron Limited)
Contents
DEPOSITION APPARATUS AND DEPOSITION METHOD
Organization Name
Inventor(s)
Hiroki Murakami of Yamanashi (JP)
DEPOSITION APPARATUS AND DEPOSITION METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18583059 titled 'DEPOSITION APPARATUS AND DEPOSITION METHOD
Simplified Explanation: The patent application describes a deposition apparatus with a gas supply system that includes a heating mechanism to heat the purge gas before it is supplied into the processing chamber.
Key Features and Innovation:
- Deposition apparatus with a gas supply system
- Heating mechanism in the gas supply nozzle to heat the purge gas
- Controller to control the operation of the gas supply
- Improved control over the temperature of the purge gas
Potential Applications: This technology can be used in various thin film deposition processes in industries such as semiconductor manufacturing, solar cell production, and optical coatings.
Problems Solved: The technology addresses the need for precise control over the temperature of the purge gas in deposition processes to ensure high-quality thin film coatings.
Benefits:
- Enhanced deposition process control
- Improved thin film quality
- Increased efficiency in thin film production
Commercial Applications: The technology can be applied in industries such as electronics, optics, and renewable energy for the production of high-quality thin film coatings.
Prior Art: Readers can start searching for prior art related to gas supply systems in deposition apparatuses in the field of thin film technology.
Frequently Updated Research: Stay updated on advancements in gas supply systems for deposition processes to improve thin film quality and production efficiency.
Questions about Gas Supply Systems in Deposition Apparatuses: 1. What are the key components of a gas supply system in a deposition apparatus? 2. How does heating the purge gas before supply into the processing chamber impact the deposition process?
Original Abstract Submitted
A deposition apparatus includes a processing chamber; a substrate holder configured to hold a substrate in the processing chamber; a gas supply configured to supply a processing gas and a purge gas into the processing chamber; and a controller configured to control operation of the gas supply. The gas supply includes a gas supply nozzle configured to supply the purge gas into the processing chamber. The gas supply nozzle includes a heating mechanism configured to heat the purge gas. The controller is configured to, in supplying the purge gas into the processing chamber, operate the heating mechanism to heat the purge gas to be discharged from the gas supply nozzle.
