18582551. MEMORY DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 MEMORY DEVICES AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Moisture-Resistant Memory Devices
- 1.13 Original Abstract Submitted
MEMORY DEVICES AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chien-Min Lee of Hsinchu County (TW)
Tung-Ying Lee of Hsinchu City (TW)
Cheng-Hsien Wu of Hsinchu City (TW)
MEMORY DEVICES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18582551 titled 'MEMORY DEVICES AND METHODS OF FORMING THE SAME
Simplified Explanation
The patent application describes a memory device with a unique structure that includes a moisture-resistant layer made of an amorphous material to protect the memory stack.
- The memory device has a substrate, a transistor, an interconnect structure, and a memory stack.
- The memory stack consists of a bottom electrode, a memory layer, a selector layer, and a top electrode.
- A moisture-resistant layer is placed next to the selector layer to prevent moisture damage.
- The moisture-resistant layer is made of an amorphous material for enhanced protection.
Key Features and Innovation
- Memory device structure with a moisture-resistant layer for protection.
- Amorphous material used in the moisture-resistant layer.
- Unique arrangement of memory stack components for improved performance.
Potential Applications
The technology can be applied in various memory devices, such as computer memory, mobile devices, and data storage systems.
Problems Solved
- Prevents moisture damage to the memory stack.
- Enhances the durability and reliability of the memory device.
Benefits
- Improved longevity of memory devices.
- Enhanced performance and reliability.
- Protection against environmental factors like moisture.
Commercial Applications
Moisture-Resistant Memory Devices for Electronics
This technology can be utilized in the manufacturing of electronic devices to ensure long-lasting and reliable memory storage.
Prior Art
There may be prior art related to the use of moisture-resistant materials in memory devices or electronic components. Researchers can explore patents and academic literature in the field of memory device technology.
Frequently Updated Research
Researchers are constantly exploring new materials and techniques to improve the performance and durability of memory devices. Stay updated on the latest advancements in the field of memory device technology.
Questions about Moisture-Resistant Memory Devices
How does the use of amorphous materials in the moisture-resistant layer benefit the memory device?
The amorphous material provides a protective barrier against moisture, enhancing the longevity and reliability of the memory device.
What are the potential challenges in implementing moisture-resistant layers in memory devices?
One challenge could be ensuring the compatibility and stability of the moisture-resistant layer with other components of the memory device.
Original Abstract Submitted
A memory device includes a substrate, a transistor disposed over the substrate, an interconnect structure disposed over and electrically connected to the transistor, and a memory stack disposed between two adjacent metallization layers of the interconnect structure. The memory stack includes a bottom electrode disposed over the substrate and electrically connected to a bit line, a memory layer disposed over the bottom electrode, a selector layer disposed over the memory layer, and a top electrode disposed over the selector layer and electrically connected to a word line. Besides, at least one moisture-resistant layer is provided adjacent to and in physical contact with the selector layer, and the at least one moisture-resistant layer includes an amorphous material.
