18581738. TRANSISTOR DEVICE HAVING ULTRAVIOLET ATTENUATING CAPABILITY simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
TRANSISTOR DEVICE HAVING ULTRAVIOLET ATTENUATING CAPABILITY
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Katherine H. Chiang of Hsinchu (TW)
Neil Quinn Murray of Hsinchu (TW)
Ming-Yen Chuang of Hsinchu (TW)
TRANSISTOR DEVICE HAVING ULTRAVIOLET ATTENUATING CAPABILITY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18581738 titled 'TRANSISTOR DEVICE HAVING ULTRAVIOLET ATTENUATING CAPABILITY
The patent application describes a transistor device with a UV-attenuating layer to protect the channel layer from UV light-induced degradation.
- The device includes a first source/drain region and a second source/drain region, a channel layer, a gate insulator layer, and a gate electrode.
- The UV-attenuating layer is positioned on the channel layer to shield it from UV light, preventing characteristic degradation.
- This innovation aims to enhance the durability and performance of the transistor device in UV-exposed environments.
Potential Applications: - Electronics industry for UV-sensitive applications - Aerospace and defense for UV-exposed environments - Solar energy systems for protection against UV radiation
Problems Solved: - Prevents characteristic degradation in the channel layer caused by UV light exposure - Improves the reliability and longevity of the transistor device in UV-rich settings
Benefits: - Enhanced durability and performance of the transistor device - Increased lifespan and reliability in UV-exposed conditions - Maintains consistent functionality in challenging environments
Commercial Applications: Title: "UV-Attenuating Transistor Devices for Enhanced Durability in UV-Exposed Environments" This technology can be utilized in various industries such as electronics, aerospace, defense, and solar energy for improved reliability and performance in UV-rich settings.
Questions about UV-Attenuating Transistor Devices: 1. How does the UV-attenuating layer protect the channel layer from UV light-induced degradation? 2. What are the potential applications of this technology in UV-sensitive industries?
Original Abstract Submitted
A transistor device includes a first source/drain region and a second source/drain region spaced apart from each other; a channel layer electrically connected to the first and second source/drain regions; a gate insulator layer; a gate electrode isolated from the channel layer by the gate insulator layer; and a UV-attenuating layer disposed on the channel layer to protect the channel layer from characteristic degradation caused by UV light.
