18581606. SEMICONDUCTOR DEVICE simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18581606 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation: The patent application describes a semiconductor device that combines a top gate transistor with a single-crystal semiconductor layer and a bottom gate transistor with an amorphous silicon (microcrystalline silicon) layer on the same substrate. By using the same materials for gate electrodes, source, and drain electrodes, manufacturing steps are reduced, allowing for the production of two types of transistors with minimal additional steps.
- **Key Features and Innovation:**
- Combination of top gate and bottom gate transistors on the same substrate - Use of single-crystal and amorphous silicon layers for different transistors - Reduction in manufacturing steps by using the same materials for electrodes
- **Potential Applications:**
- High-speed semiconductor devices - Large-sized semiconductor devices - Electronics industry for various applications
- **Problems Solved:**
- Streamlining manufacturing processes for different types of transistors - Enhancing the performance of semiconductor devices - Increasing efficiency in semiconductor device production
- **Benefits:**
- Improved speed and size of semiconductor devices - Cost-effective manufacturing process - Enhanced overall performance of electronic devices
- **Commercial Applications:**
- Potential use in consumer electronics - Industrial applications for high-speed processing - Telecommunications industry for improved devices
- **Prior Art:**
- Researchers may explore prior patents related to semiconductor device manufacturing processes, combining different types of transistors, and optimizing performance in electronic devices.
- **Frequently Updated Research:**
- Ongoing research in semiconductor materials and device fabrication techniques - Advancements in single-crystal and amorphous silicon technologies
Questions about Semiconductor Device Innovation:
1. What are the primary advantages of combining top gate and bottom gate transistors in a semiconductor device?
- By combining top gate and bottom gate transistors, manufacturers can create devices that offer both high speed and large size, catering to a wide range of applications in the electronics industry.
2. How does the use of single-crystal and amorphous silicon layers contribute to the performance of the semiconductor device?
- The use of single-crystal silicon in the top gate transistor and amorphous silicon in the bottom gate transistor allows for optimized performance in terms of speed and efficiency, providing a balance between high-speed operation and cost-effectiveness.
Original Abstract Submitted
It is an object to provide a semiconductor device which has a large size and operates at high speed. A top gate transistor which includes a semiconductor layer of single-crystal and a bottom gate transistor which includes a semiconductor layer of amorphous silicon (microcrystalline silicon) are formed over the same substrate. Then, gate electrodes of each transistor are formed with the same layer, and source and drain electrodes are also formed with the same layer. Thus, manufacturing steps are reduced. In other words, two types of transistors can be manufactured by adding only a few steps to the manufacturing process of a bottom gate transistor.
