18581604. Methods, Structures and Devices for Intra-Connection Structures simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
Methods, Structures and Devices for Intra-Connection Structures
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Feng-Ming Chang of Zhubei City (TW)
Kuo-Hsiu Hsu of Zhongli City (TW)
Methods, Structures and Devices for Intra-Connection Structures - A simplified explanation of the abstract
This abstract first appeared for US patent application 18581604 titled 'Methods, Structures and Devices for Intra-Connection Structures
Simplified Explanation: The patent application describes a method for creating an intra-connection structure in a semiconductor device, allowing for electrical connection between different components on the substrate.
- A first gate structure and a first source/drain region are formed on the substrate.
- A first dielectric material is placed on the first source/drain region.
- A spacer material is added to the first gate structure.
- The first dielectric material is removed to expose part of the first source/drain region.
- Part of the spacer material is removed to reveal part of the first gate structure.
- A first conductive material is inserted between the first gate structure and the first source/drain region to establish electrical connection between them.
Key Features and Innovation:
- Formation of an intra-connection structure in a semiconductor device.
- Use of dielectric and spacer materials to create the structure.
- Facilitates electrical connection between different components on the substrate.
Potential Applications: This technology can be applied in the semiconductor industry for creating efficient and reliable intra-connection structures in various electronic devices.
Problems Solved:
- Enables precise electrical connections between components.
- Enhances the performance and functionality of semiconductor devices.
Benefits:
- Improved electrical connectivity.
- Enhanced device performance.
- Increased reliability of electronic components.
Commercial Applications: Potential commercial applications include the manufacturing of advanced integrated circuits, microprocessors, and other semiconductor devices where precise intra-connections are crucial for optimal performance.
Prior Art: Readers can explore prior patents related to semiconductor device fabrication processes, specifically focusing on intra-connection structures and methods.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor device fabrication techniques, particularly in the area of intra-connection structures.
Questions about Intra-Connection Structures: 1. What are the key materials used in creating intra-connection structures in semiconductor devices? 2. How does the formation of intra-connection structures impact the overall performance of electronic devices?
Original Abstract Submitted
Systems and methods are provided for forming an intra-connection structure. A first gate structure and a first source/drain region adjacent to the first gate structure is formed on a substrate. A first dielectric material is disposed on the first source/drain region. A spacer material is formed on the first gate structure. The first dielectric material is removed to expose at least part of the first source/drain region. At least part of the spacer material is removed to expose at least part of the first gate structure. A first conductive material is formed between the first gate structure and the first source/drain region to electrically connect the first source/drain region and the first gate structure.
