18581598. METAL BASED HYDROGEN BARRIER simplified abstract (Applied Materials, Inc.)
Contents
METAL BASED HYDROGEN BARRIER
Organization Name
Inventor(s)
Srinivas Gandikota of Santa Clara CA (US)
Steven C.H. Hung of Sunnyvale CA (US)
Srinivas D. Nemani of Saratoga CA (US)
Yixiong Yang of Fremont CA (US)
Susmit Singha Roy of Campbell CA (US)
Nikolaos Bekiaris of Campbell CA (US)
METAL BASED HYDROGEN BARRIER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18581598 titled 'METAL BASED HYDROGEN BARRIER
The abstract describes a method for forming an electronic device by depositing a metal on a substrate, followed by depositing a metal cap on the metal, and exposing the substrate to an anneal process to minimize parasitic adsorption of hydrogen by the underlying metal.
- Metal is deposited on a substrate, which can include copper (Cu), titanium (Ti), or tantalum (Ta).
- A metal cap is then deposited on the metal, which can include molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au).
- The substrate undergoes an anneal process, such as a hydrogen high-pressure anneal, to reduce hydrogen adsorption by the metal.
Potential Applications: - Semiconductor manufacturing - Electronics industry - Nanotechnology research
Problems Solved: - Minimizing parasitic adsorption of hydrogen - Enhancing electronic device performance
Benefits: - Improved device reliability - Enhanced device functionality - Increased efficiency in electronic applications
Commercial Applications: Title: "Enhanced Electronic Device Manufacturing Process" This technology can be utilized in the semiconductor industry to improve the performance and reliability of electronic devices, leading to higher quality products and increased market competitiveness.
Prior Art: Readers can explore prior research on metal deposition techniques, hydrogen adsorption in metals, and electronic device manufacturing processes to gain a deeper understanding of the innovation presented in this patent application.
Frequently Updated Research: Stay informed about advancements in metal cap deposition methods, annealing processes, and materials science research related to electronic device manufacturing.
Questions about the technology: 1. How does the metal cap deposition process impact the performance of electronic devices? 2. What are the key differences between various metals used in the metal cap and their effects on device functionality?
Original Abstract Submitted
A method of forming an electronic device is disclosed. The method comprises forming depositing a metal on a substrate, the metal comprising one or more of copper (Cu), titanium (Ti), or tantalum (Ta). A metal cap is deposited on the metal. The metal cap comprises one or more of molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au). The substrate is then exposed to an anneal process, e.g., a hydrogen high-pressure anneal. The formation of the metal cap on the metal minimizes parasitic adsorption of hydrogen by the underlying metal.
