18581561. REDUCED SEMICONDUCTOR WAFER BOW AND WARPAGE simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
Contents
REDUCED SEMICONDUCTOR WAFER BOW AND WARPAGE
Organization Name
TEXAS INSTRUMENTS INCORPORATED
Inventor(s)
Christopher Scott Whitesell of Garland TX (US)
Brian K. Kirkpatrick of Allen TX (US)
Byron Joseph Palla of Murphy TX (US)
REDUCED SEMICONDUCTOR WAFER BOW AND WARPAGE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18581561 titled 'REDUCED SEMICONDUCTOR WAFER BOW AND WARPAGE
The abstract describes a method of forming an integrated circuit by first creating two front end of line (FEOL) layers of different thicknesses, with one layer facing the semiconductor substrate frontside and the other layer facing the backside. The second FEOL layer, which shares the same material as the first layer, is then processed to reduce its thickness.
- The innovation involves the concurrent formation of two FEOL layers with different thicknesses.
- The method includes processing the second FEOL layer to reduce its thickness.
- Both FEOL layers are made of the same material.
- The first FEOL layer faces the semiconductor substrate frontside, while the second FEOL layer faces the backside.
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Electronics industry
Problems Solved: - Efficient formation of integrated circuits - Improved semiconductor substrate contact - Enhanced performance of electronic devices
Benefits: - Enhanced circuit performance - Increased efficiency in manufacturing processes - Improved reliability of electronic components
Commercial Applications: Title: "Advanced Integrated Circuit Manufacturing Process" This technology can be utilized in the production of various electronic devices, such as smartphones, computers, and automotive systems. It has the potential to revolutionize the semiconductor industry by improving the performance and reliability of integrated circuits.
Questions about the technology: 1. How does the method of forming two FEOL layers benefit the overall performance of integrated circuits? 2. What are the specific advantages of processing the second FEOL layer to reduce its thickness in semiconductor manufacturing?
Original Abstract Submitted
Forming an integrated circuit, for example by first, concurrently forming a first front end of line (FEOL) layer having a first thickness and a surface contacting or facing a semiconductor substrate frontside and a second FEOL layer, having a second thickness and including a same material as the first FEOL layer and having a surface contacting or facing a semiconductor substrate backside, and second, processing the second FEOL layer to reduce the second thickness.
