18581182. SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Feng-Ching Chu of Pingtung County (TW)
Wei-Yang Lee of Taipei City (TW)
Feng-Cheng Yang of Hsinchu County (TW)
Yen-Ming Chen of Hsin-Chu County (TW)
SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18581182 titled 'SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME
The semiconductor device described in the patent application consists of a substrate with regions of opposite conductivity types, isolation features, fins protruding from the substrate, and epitaxial features on the fins.
- The device includes a first fin in a first region of the substrate and a second fin in a second region of the substrate.
- Isolation features are present on the sidewalls of the fins and between them, with varying thicknesses.
- The first and second epitaxial features are located over the first and second fins, respectively.
Potential Applications: - This technology could be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It may find applications in the development of high-performance integrated circuits and microprocessors.
Problems Solved: - The technology addresses the need for improved isolation features in semiconductor devices to enhance performance and reliability. - It provides a solution for optimizing the integration of different conductivity regions on a single substrate.
Benefits: - Enhanced performance and reliability of semiconductor devices. - Improved efficiency in the manufacturing process of advanced electronic components.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology could be utilized in the production of high-speed processors, memory chips, and other electronic components for consumer electronics, telecommunications, and automotive industries.
Questions about the technology: 1. How does the varying thickness of the isolation features contribute to the performance of the semiconductor device? 2. What are the potential challenges in scaling up the production of semiconductor devices using this technology?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor device technology, particularly in the integration of isolation features and epitaxial structures for improved performance and reliability.
Original Abstract Submitted
A semiconductor device includes a substrate having a first region and a second region of opposite conductivity types, an isolation feature over the substrate, a first fin protruding from the substrate in the first region, a first epitaxial feature over the first fin, a second fin protruding from the substrate in the second region, and a second epitaxial feature over the second fin. The isolation feature includes a first portion disposed on sidewalls of the first fin, a second portion disposed on sidewalls of the second fin, and a third portion located between the first fin and the second fin. The third portion has a thickness larger than the first portion and the second portion.
