18581162. CONTACT FORMATION METHOD AND RELATED STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 CONTACT FORMATION METHOD AND RELATED STRUCTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 CONTACT FORMATION METHOD AND RELATED STRUCTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Metal Gate Contacts
- 1.13 Original Abstract Submitted
CONTACT FORMATION METHOD AND RELATED STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chao-Hsun Wang of Taoyuan County (TW)
Wang-Jung Hsueh of New Taipei City (TW)
Kuo-Yi Chao of Hsinchu City (TW)
CONTACT FORMATION METHOD AND RELATED STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18581162 titled 'CONTACT FORMATION METHOD AND RELATED STRUCTURE
Simplified Explanation
The patent application describes a method and structure for creating a via-first metal gate contact in semiconductor devices.
- Deposit a dielectric layer over a substrate with a metal gate structure.
- Create an opening in the dielectric layer to expose the substrate.
- Deposit a metal layer within the opening.
- Add a second dielectric layer over the first dielectric layer and metal layer.
- Etch the dielectric layers to form a gate via opening.
- Remove part of the second dielectric layer to create a contact opening exposing the metal layer.
- Merge the gate via and contact openings to form a composite opening.
- Deposit a second metal layer within the composite opening to connect the metal gate layer to the first metal layer.
Key Features and Innovation
- Formation of a via-first metal gate contact structure in semiconductor devices.
- Sequential deposition and etching of dielectric and metal layers to create gate via and contact openings.
- Connection of metal gate layer to first metal layer through the composite opening.
Potential Applications
The technology can be applied in the semiconductor industry for creating efficient metal gate contacts in integrated circuits and other electronic devices.
Problems Solved
- Facilitates the formation of reliable metal gate contacts in semiconductor devices.
- Enables improved electrical connections between different layers in the device structure.
Benefits
- Enhanced performance and reliability of semiconductor devices.
- Simplified manufacturing process for creating metal gate contacts.
- Improved electrical connectivity within the device structure.
Commercial Applications
- Semiconductor manufacturing industry for integrated circuits and electronic devices.
- Potential applications in consumer electronics, telecommunications, and automotive electronics.
Prior Art
Readers can explore prior patents related to metal gate contacts, semiconductor device manufacturing, and via-first contact structures to understand the existing technology landscape.
Frequently Updated Research
Stay updated on advancements in semiconductor device manufacturing techniques, materials science, and nanotechnology research relevant to metal gate contacts and via-first contact structures.
Questions about Metal Gate Contacts
How do metal gate contacts impact the performance of semiconductor devices?
Metal gate contacts play a crucial role in ensuring efficient electrical connections within semiconductor devices, which directly affects their overall performance and reliability.
What are the key differences between via-first and via-last contact structures in semiconductor devices?
Via-first contact structures involve creating vias before metal deposition, while via-last structures involve forming vias after metal deposition. Each approach has its advantages and limitations in terms of manufacturing complexity and performance.
Original Abstract Submitted
A method and structure for forming a via-first metal gate contact includes depositing a first dielectric layer over a substrate having a gate structure with a metal gate layer. An opening is formed within the first dielectric layer to expose a portion of the substrate, and a first metal layer is deposited within the opening. A second dielectric layer is deposited over the first dielectric layer and over the first metal layer. The first and second dielectric layers are etched to form a gate via opening. The gate via opening exposes the metal gate layer. A portion of the second dielectric layer is removed to form a contact opening that exposes the first metal layer. The gate via and contact openings merge to form a composite opening. A second metal layer is deposited within the composite opening, thus connecting the metal gate layer to the first metal layer.
