18581154. SYSTEM AND METHOD FOR BACKSIDE DEPOSITION OF A SUBSTRATE simplified abstract (Tokyo Electron Limited)
Contents
SYSTEM AND METHOD FOR BACKSIDE DEPOSITION OF A SUBSTRATE
Organization Name
Inventor(s)
Ronald Nasman of Averill Park NY (US)
Gerrit J. Leusink of Rexford NY (US)
Rodney L. Robinson of East Berne NY (US)
Hoyoung Kang of Guilderland NY (US)
Daniel Fulford of Albany NY (US)
SYSTEM AND METHOD FOR BACKSIDE DEPOSITION OF A SUBSTRATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18581154 titled 'SYSTEM AND METHOD FOR BACKSIDE DEPOSITION OF A SUBSTRATE
The patent application describes a process chamber designed to deposit thin films on the backside surfaces of wafers to reduce wafer bowing and distortion.
- Substrate support with annular perimeter seal allows exposure of the majority of the substrate backside to the process environment.
- Supported wafer separates the chamber into lower and upper chambers with different process environments.
- Lower section includes deposition hardware for applying and removing thin films, while the upper section remains chemically inert to protect existing features on the wafer's top surface.
- Multiple exhausts and differential pressures prevent deposition gasses from accessing the working surface of the wafer.
Potential Applications: - Semiconductor manufacturing - Thin film deposition processes - Wafer processing in cleanroom environments
Problems Solved: - Reducing wafer bowing and distortion during thin film deposition - Protecting top surface features of wafers during backside processing
Benefits: - Improved wafer quality and yield - Enhanced process control and repeatability - Reduced manufacturing costs due to fewer defective wafers
Commercial Applications: Title: Advanced Thin Film Deposition System for Semiconductor Manufacturing Description: This technology can be utilized by semiconductor manufacturers to improve wafer processing and enhance overall production efficiency. The system's ability to reduce wafer bowing and distortion can lead to higher yields and cost savings in the manufacturing process.
Prior Art: Readers can explore prior art related to thin film deposition systems, wafer processing technologies, and semiconductor manufacturing equipment to gain a deeper understanding of the innovation presented in this patent application.
Frequently Updated Research: Stay informed about the latest advancements in thin film deposition techniques, wafer processing technologies, and semiconductor manufacturing processes to ensure you are leveraging the most cutting-edge solutions in your operations.
Questions about Thin Film Deposition Systems: 1. How does the annular perimeter seal on the substrate support contribute to reducing wafer bowing and distortion? 2. What are the key differences between the lower and upper chambers in the processing chamber design?
Original Abstract Submitted
Techniques herein include a process chamber for depositing thin films to backside surfaces of wafers to reduce wafer bowing and distortion. A substrate support provides an annular perimeter seal around the bottom and/or side of the wafer which allows the majority of the substrate backside to be exposed to a process environment. A supported wafer separates the chamber into lower and upper chambers that provide different process environments. The lower section of the processing chamber includes deposition hardware configured to apply and remove thin films. The upper section can remain a chemically inert environment, protecting the existing features on the top surface of the wafer. Multiple exhausts and differential pressures are used to prevent deposition gasses from accessing the working surface of a wafer.
