18581104. FINFET DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 FINFET DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FINFET DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about FinFET Technology
- 1.13 Original Abstract Submitted
FINFET DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chia Tai Lin of Taichung City (TW)
Yih-Ann Lin of Jhudong Township (TW)
An-Shen Chang of Jubei City (TW)
Ryan Chia-Jen Chen of Chiayi (TW)
Chao-Cheng Chen of Hsin-Chu City (TW)
FINFET DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18581104 titled 'FINFET DEVICE
Simplified Explanation
A FinFET device with multiple fins over a substrate, dielectric layer filling the space between fins, and a dielectric trench with a vertical profile exposing a portion of the fins.
- The device includes a plurality of fins formed over a substrate.
- A dielectric layer fills the space between each fin and covers a first portion of the fins.
- A dielectric trench is formed in the dielectric layer with a vertical profile.
- A second portion of the fins is recessed and exposed in the dielectric trench.
- The second portion of the fins has a rounded-convex-shape top profile.
Key Features and Innovation
- Multiple fins over a substrate in a FinFET device.
- Dielectric layer filling the space between fins.
- Dielectric trench with a vertical profile exposing a portion of the fins.
- Second portion of the fins recessed and exposed in the dielectric trench.
- Fins with a rounded-convex-shape top profile.
Potential Applications
This technology can be used in advanced semiconductor devices for improved performance and efficiency.
Problems Solved
Enhanced control and performance of FinFET devices by exposing a portion of the fins in a dielectric trench.
Benefits
- Improved device performance.
- Enhanced efficiency.
- Better control over the semiconductor device.
Commercial Applications
- Semiconductor industry for advanced devices.
- Electronics manufacturing for high-performance applications.
Prior Art
Further research can be conducted in the field of FinFET devices and semiconductor technology to explore similar innovations.
Frequently Updated Research
Ongoing research in semiconductor device design and fabrication techniques may provide new insights into FinFET technology.
Questions about FinFET Technology
What are the potential advantages of using a FinFET device over traditional transistors?
FinFET devices offer improved control, reduced leakage, and better performance compared to traditional transistors due to their unique structure and design.
How does the dielectric trench in the FinFET device contribute to its functionality?
The dielectric trench helps in exposing a portion of the fins, allowing for better control and performance of the semiconductor device.
Original Abstract Submitted
A fin-type field-effect transistor (FinFET) device includes a plurality of fins formed over a substrate. The semiconductor device further includes a dielectric layer filled in a space between each fin and over a first portion of the plurality of fins and a dielectric trench formed in the dielectric layer. The dielectric trench has a vertical profile. The semiconductor device further includes a second portion of the plurality of fins recessed and exposed in the dielectric trench. The second portion of the plurality of fins have a rounded-convex-shape top profile.
