18581096. SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Nanostructure Device Innovation
- 1.13 Original Abstract Submitted
SEMICONDUCTOR DEVICES
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Sai-Hooi Yeong of Perdana (MY)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18581096 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The patent application describes a device with a unique structure involving nanostructures, epitaxial regions, interlayer dielectrics, source/drain contacts, and gate stacks.
- The device includes a first nanostructure with a channel region and a lightly doped source/drain region.
- A first epitaxial source/drain region wraps around four sides of the lightly doped region.
- An interlayer dielectric is placed over the epitaxial region.
- A source/drain contact extends through the interlayer dielectric, wrapping around the epitaxial region.
- A gate stack is positioned adjacent to the source/drain contact and the channel region, wrapping around four sides of the channel region.
Key Features and Innovation
- Unique device structure with nanostructures and epitaxial regions.
- Enhanced performance and efficiency due to the specific layout of components.
- Improved electrical properties and functionality.
Potential Applications
This technology could be applied in semiconductor devices, integrated circuits, and other electronic applications requiring high performance and efficiency.
Problems Solved
- Addressing limitations in traditional device structures.
- Improving overall device performance and functionality.
- Enhancing electrical properties and reliability.
Benefits
- Increased efficiency and performance.
- Enhanced electrical properties.
- Potential for advanced electronic applications.
Commercial Applications
- Semiconductor industry for high-performance devices.
- Electronics manufacturing for integrated circuits.
- Research and development in nanotechnology and electronics.
Prior Art
Readers can explore prior research on nanostructures, epitaxial regions, and device structures in semiconductor technology to understand the evolution of this innovation.
Frequently Updated Research
Stay informed about the latest advancements in nanostructure technology, epitaxial growth techniques, and semiconductor device design to further enhance the understanding and application of this innovation.
Questions about Nanostructure Device Innovation
What are the potential drawbacks of using nanostructures in device design?
Nanostructures can be challenging to manufacture and integrate into devices, leading to increased production costs and complexity.
How does the epitaxial growth process contribute to the performance of the device?
Epitaxial growth ensures a high-quality crystalline structure, improving the electrical properties and reliability of the device.
Original Abstract Submitted
In an embodiment, a device includes: a first nanostructure over a substrate, the first nanostructure including a channel region and a first lightly doped source/drain region, the first lightly doped source/drain region adjacent the channel region; a first epitaxial source/drain region wrapped around four sides of the first lightly doped source/drain region; an interlayer dielectric over the first epitaxial source/drain region; a source/drain contact extending through the interlayer dielectric, the source/drain contact wrapped around four sides of the first epitaxial source/drain region; and a gate stack adjacent the source/drain contact and the first epitaxial source/drain region, the gate stack wrapped around four sides of the channel region.
