18581049. SEMICONDUCTOR DEVICES INCLUDING SEPARATE CHARGE STORAGE LAYERS simplified abstract (Samsung Electronics Co., Ltd.)
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SEMICONDUCTOR DEVICES INCLUDING SEPARATE CHARGE STORAGE LAYERS
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Inventor(s)
SEMICONDUCTOR DEVICES INCLUDING SEPARATE CHARGE STORAGE LAYERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18581049 titled 'SEMICONDUCTOR DEVICES INCLUDING SEPARATE CHARGE STORAGE LAYERS
Semiconductor devices are described in this patent application, featuring gate electrodes stacked perpendicularly to the substrate's upper surface, interlayer insulating layers alternating with the gate electrodes, and channel structures passing through the gate electrodes.
- The semiconductor device includes channel structures with a channel layer, tunneling insulating layer, charge storage layers, and first blocking insulating layers.
- Each channel structure has charge storage layers between the gate electrodes and the tunneling insulating layer.
- The first layer of the first blocking insulating layers is on the upper, lower, and side surfaces of the charge storage layers.
Potential Applications: - This technology can be applied in the development of advanced semiconductor devices for various electronic applications. - It can enhance the performance and efficiency of memory devices and integrated circuits.
Problems Solved: - This technology addresses the need for improved semiconductor device structures with enhanced functionality and performance. - It solves challenges related to data storage and processing in electronic devices.
Benefits: - Improved performance and efficiency of semiconductor devices. - Enhanced data storage capabilities. - Increased reliability and durability of electronic components.
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology can be utilized in the production of memory devices, microprocessors, and other electronic components for consumer electronics, telecommunications, and computing industries.
Questions about the technology: 1. How does this semiconductor device structure improve data storage capabilities? - This technology enhances data storage capabilities by incorporating advanced channel structures with charge storage layers and blocking insulating layers.
2. What are the potential market implications of using this technology in commercial applications? - By implementing this technology in memory devices and microprocessors, companies can offer more efficient and reliable electronic products to consumers.
Original Abstract Submitted
Semiconductor devices are provided. A semiconductor device includes gate electrodes on a substrate and stacked perpendicularly to an upper surface of the substrate. The semiconductor device includes interlayer insulating layers alternately stacked with the gate electrodes. Moreover, the semiconductor device includes channel structures passing through the gate electrodes. Each of the channel structures includes a channel layer extending perpendicularly to the upper surface of the substrate, a tunneling insulating layer on the channel layer, charge storage layers on the tunneling insulating layer in respective regions between the gate electrodes and a side surface of the tunneling insulating layer, and first blocking insulating layers on the charge storage layers, respectively. A first layer of the first blocking insulating layers is on an upper surface, a lower surface, and a side surface of a first layer of the charge storage layers.
