18575974. SURFACE EMITTING DEVICE simplified abstract (SONY GROUP CORPORATION)
Contents
SURFACE EMITTING DEVICE
Organization Name
Inventor(s)
Hiroshi Nakajima of Tokyo (JP)
Michinori Shiomi of Tokyo (JP)
Tomomasa Watanabe of Tokyo (JP)
Masashi Takanohashi of Tokyo (JP)
Mikihiro Yokozeki of Tokyo (JP)
SURFACE EMITTING DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18575974 titled 'SURFACE EMITTING DEVICE
The surface emitting device described in the patent application includes multiple layers of different semiconductor materials and reflective layers to emit light efficiently.
- First reflective layer
- First semiconductor layer of a first conductive type
- Active layer
- Second semiconductor layer of a second conductive type
- Tunnel junction layer
- Third semiconductor layer of the first conductive type
- Second reflective layer
- Dielectric layer with an aperture
- Fourth semiconductor layer within the aperture
Potential Applications: - High-efficiency light emitting diodes (LEDs) - Laser diodes - Optical communication devices
Problems Solved: - Improved light emission efficiency - Enhanced performance of semiconductor devices
Benefits: - Higher brightness and energy efficiency - Better control of light emission - Increased reliability and longevity of devices
Commercial Applications: Title: Advanced Semiconductor Devices for Optoelectronics This technology can be used in various commercial applications such as: - Display technology - Solid-state lighting - Telecommunications industry
Questions about the technology: 1. How does the dielectric layer with an aperture improve the performance of the device? 2. What are the advantages of using different semiconductor layers of opposite conductive types in the device?
Original Abstract Submitted
A surface emitting device according to an embodiment of the present disclosure includes: a first reflective layer; a first semiconductor layer of a first conductive type, the first semiconductor layer being stacked on the first reflective layer; an active layer stacked on the first semiconductor layer; a second semiconductor layer of a second conductive type that is a conductive type opposite to the first conductive type, the second semiconductor layer being stacked on the active layer; a tunnel junction layer stacked on the second semiconductor layer; a third semiconductor layer of the first conductive type, the third semiconductor layer being stacked on the tunnel junction layer; a second reflective layer stacked on the third semiconductor layer, at a side opposite to a side of the first reflective layer; a dielectric layer formed, through non-selective oxidation, between the second semiconductor layer and the third semiconductor layer or between the third semiconductor layer and the second reflective layer, the dielectric layer having an aperture penetrating through in a thickness direction; and a fourth semiconductor layer stacked, within the aperture, on the second semiconductor layer or the third semiconductor layer and formed through selective growth of the second semiconductor layer or the third semiconductor layer.
