18575942. SEMICONDUCTOR DEVICE simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)

SEMICONDUCTOR DEVICE

Organization Name

SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor(s)

Satoru Saito of Yamato, Kanagawa (JP)

Masahiro Takahashi of Atsugi, Kanagawa (JP)

Naoki Okuno of Yamato, Kanagawa (JP)

Haruyuki Baba of Isehara, Kanagawa (JP)

Hitoshi Kunitake of Machida, Tokyo (JP)

Shunpei Yamazaki of Setagaya, Tokyo (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18575942 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation:

This patent application describes a semiconductor device with a small variation in transistor electrical characteristics. The device includes various layers and materials to achieve this variation.

• The semiconductor device includes an oxide, conductors, insulators, and a concentration gradient of aluminum within the oxide.
• The oxide contains indium, gallium, aluminum, and zinc.
• The insulators contain aluminum and oxygen.
• The fourth insulator has an amorphous structure.
• The aluminum concentration within the oxide increases towards the top surface.

Key Features and Innovation:

• Variation in transistor electrical characteristics.
• Use of specific materials like indium, gallium, aluminum, and zinc.
• Amorphous structure of the fourth insulator.
• Aluminum concentration gradient within the oxide.

Potential Applications:

• Semiconductor industry for electronic devices.
• Transistor manufacturing.
• Integrated circuits.

Problems Solved:

• Achieving small variations in transistor characteristics.
• Enhancing semiconductor device performance.
• Improving conductivity and insulation properties.

Benefits:

• Enhanced performance of semiconductor devices.
• Improved efficiency of transistors.
• Better control over electrical characteristics.

Commercial Applications:

• Semiconductor manufacturing companies.
• Electronics industry for consumer devices.
• Research institutions for advanced technology development.

Questions about Semiconductor Device with Small Variation in Transistor Electrical Characteristics:

1. How does the aluminum concentration gradient within the oxide impact the performance of the semiconductor device? 2. What are the specific advantages of using an amorphous structure for the fourth insulator in this semiconductor device?

Original Abstract Submitted

A semiconductor device with a small variation in transistor electrical characteristics is provided. The semiconductor device includes an oxide; a first conductor, a second conductor, and a first insulator over the oxide; a second insulator over the first conductor and the second conductor; a third insulator over the first insulator; a third conductor over the third insulator; and a fourth insulator over the second insulator and the third conductor. The fourth insulator is in contact with a top surface of the second insulator and a top surface of the third conductor. The first insulator includes regions that are in contact with a top surface of the oxide, a side surface of the first conductor, a side surface of the second conductor, and a side surface of the second insulator. The oxide includes indium, gallium, aluminum, and zinc. Each of the first insulator and the fourth insulator includes aluminum and oxygen. The fourth insulator has an amorphous structure. The oxide has a concentration gradient in which an aluminum concentration increases toward the top surface of the oxide from the bottom surface of the oxide.