18574492. SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD (Tokyo Electron Limited)
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
Organization Name
Inventor(s)
Koji Ushimaru of Koshi City, Kumamoto JP
Kenji Iizuka of Koshi City, Kumamoto JP
Kei Miyazaki of Koshi City, Kumamoto JP
Yukinobu Otsuka of Koshi City, Kumamoto JP
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
This abstract first appeared for US patent application 18574492 titled 'SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
Original Abstract Submitted
A substrate processing apparatus includes a hot plate configured to support a substrate having a film formed thereon and perform a heat treatment of heating the substrate; a chamber configured to cover the substrate supported by the hot plate; a gas discharger, having a head member provided with multiple discharge holes distributed along a surface facing the substrate supported by the hot plate, configured to discharge a gas toward a surface of the substrate from the multiple discharge holes; a peripheral exhaust device configured to evacuate a processing space within the chamber from an outer peripheral region outside a periphery of the substrate supported by the hot plate; and a controller. The controller controls the peripheral exhaust device to increase an exhaust amount from the peripheral exhaust device in a state that the substrate is heated.