18568006. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (Sumitomo Electric Industries, Ltd.)
Contents
SILICON CARBIDE SEMICONDUCTOR DEVICE
Organization Name
Sumitomo Electric Industries, Ltd.
Inventor(s)
Takeyoshi Masuda of Osaka (JP)
SILICON CARBIDE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18568006 titled 'SILICON CARBIDE SEMICONDUCTOR DEVICE
The abstract describes a silicon carbide semiconductor device with specific regions and planes that optimize its performance.
- Silicon carbide substrate with drift, body, source regions, and electric field relaxation region.
- Electric field relaxation region has a maximum impurity concentration plane and a closer plane with 1/10 of the maximum concentration.
- Distance between the two planes is 1.0 μm or greater, and distance from the main surface to the interface is 2.0 μm or greater.
Potential Applications: - Power electronics - High-temperature applications - Electric vehicles - Renewable energy systems
Problems Solved: - Improved efficiency and performance of semiconductor devices - Enhanced power handling capabilities - Better reliability in harsh environments
Benefits: - Higher efficiency - Increased power density - Improved thermal management - Extended device lifespan
Commercial Applications: Silicon carbide semiconductor devices can be used in various industries such as automotive, aerospace, renewable energy, and industrial manufacturing for high-performance applications.
Questions about Silicon Carbide Semiconductor Devices: 1. How does the impurity concentration in the electric field relaxation region affect the device's performance? 2. What are the key advantages of using silicon carbide substrates in semiconductor devices?
Original Abstract Submitted
A silicon carbide semiconductor device includes a silicon carbide substrate that has first and second main surfaces and that includes a drift region being of a first-conductivity-type, a body region provided on the drift region and being of a second-conductivity-type, a source region provided on the body region and being of the first-conductivity-type, and a first electric field relaxation region being of the second-conductivity-type and including a first plane in which an impurity-concentration of the second-conductivity-type is a maximum and a second plane in which the impurity-concentration of the second-conductivity-type of 1/10 of the maximum, the second plane being closer to the second main surface than the first plane is. A distance between the first and second planes is 1.0 μm or greater, and a distance from the first main surface to an interface between the first electric field relaxation region and the drift region is 2.0 μm or greater.
