18566330. POWER AMPLIFIER simplified abstract (Mitsubishi Electric Corporation)
Contents
POWER AMPLIFIER
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
Yoshinobu Sasaki of Tokyo (JP)
POWER AMPLIFIER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18566330 titled 'POWER AMPLIFIER
The abstract describes a patent application for a FET chip that includes a FET cell, a fundamental wave gate pad, a second harmonic gate pad, and gate wiring connecting the gate electrode of the FET cell to the gate pads. A pre-match chip includes a fundamental wave pre-match circuit and a second harmonic trap circuit, with wires connecting the pre-match circuit to the gate pad and trap circuit to the second harmonic gate pad.
- FET chip with FET cell, fundamental wave gate pad, and second harmonic gate pad
- Gate wiring connecting FET cell to gate pads
- Pre-match chip with fundamental wave pre-match circuit and second harmonic trap circuit
- Wires connecting pre-match circuit to fundamental wave gate pad and trap circuit to second harmonic gate pad
Potential Applications: - RF circuits - Wireless communication devices - Signal processing systems
Problems Solved: - Improved signal processing efficiency - Enhanced performance of RF circuits
Benefits: - Higher signal fidelity - Reduced interference - Increased data transmission speeds
Commercial Applications: Title: "Enhanced RF Circuitry for Improved Signal Processing" This technology can be used in the development of advanced RF circuits for wireless communication devices, leading to faster data transmission speeds and improved signal processing efficiency. This innovation has significant market implications in the telecommunications industry.
Prior Art: Readers can explore prior art related to FET chips, RF circuits, and signal processing systems to understand the evolution of this technology.
Frequently Updated Research: Stay updated on the latest advancements in FET chip technology, RF circuit design, and signal processing systems to leverage the full potential of this innovation.
Questions about FET Chip Technology: 1. How does this FET chip technology improve signal processing efficiency? 2. What are the key differences between the fundamental wave gate pad and the second harmonic gate pad in this innovation?
Original Abstract Submitted
A FET chip (T) includes a FET cell (CL,CL), a fundamental wave gate pad (GP,G) and a second harmonic gate pad (GP) separated from each other, and gate wiring (GB,GB) connecting a gate electrode (G,G) of the FET cell (CL,CL) to the fundamental wave gate pad (GP,G) and the second harmonic gate pad (GP). A pre-match chip (P) includes a fundamental wave pre-match circuit (PA,PA) and a second harmonic trap circuit (PA). A fundamental wave wire (W,W) connects the fundamental wave pre-match circuit (PA,PA) and the fundamental wave gate pad (GP,G). A second harmonic wire (W,W) connects the second harmonic trap circuit (PA) and the second harmonic gate pad (GP).
