18561961. SEMICONDUCTOR DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Semiconductor Device
- 1.13 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Semiconductor Energy Laboratory Co., Ltd.
Inventor(s)
Takanori Matsuzaki of Atsugi (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18561961 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application features a unique structure with multiple layers and electrodes, including a memory cell and a transistor containing a metal oxide.
Key Features and Innovation
- First substrate with multiple layers and electrodes
- First element layer with memory cell and transistor
- First through electrode connecting layers
- Stacked structure of second substrate and element layer
- Transistor with metal oxide in channel formation region
Potential Applications
This semiconductor device could be used in various electronic applications requiring memory storage and transistor functionality, such as in smartphones, computers, and other digital devices.
Problems Solved
The technology addresses the need for efficient memory storage and transistor performance in compact electronic devices by providing a novel structure with improved functionality.
Benefits
- Enhanced memory storage capabilities
- Improved transistor performance
- Compact design for space-saving in electronic devices
Commercial Applications
- Memory storage devices
- Integrated circuits for electronics
- Semiconductor manufacturing industry
Prior Art
Readers interested in exploring prior art related to this technology can start by researching semiconductor device structures, memory cell designs, and transistor technologies in the field of electronics.
Frequently Updated Research
Researchers are continually exploring advancements in semiconductor device structures, memory cell technologies, and transistor materials to enhance performance and efficiency in electronic devices.
Questions about Semiconductor Device
What are the potential applications of this semiconductor device?
The potential applications of this semiconductor device include use in smartphones, computers, and other digital devices requiring memory storage and transistor functionality.
How does the technology address the need for efficient memory storage and transistor performance?
The technology provides a novel structure with improved functionality, including enhanced memory storage capabilities and improved transistor performance, to meet the demands of compact electronic devices.
Original Abstract Submitted
A semiconductor device with a novel structure is provided. The semiconductor device includes a first substrate, a first element layer provided in contact with a second substrate, and a first through electrode provided in the second substrate and the first element layer. The first element layer includes a first memory cell, a first electrode, a second electrode, and a third electrode. The first memory cell includes a first transistor. The first transistor includes a semiconductor layer containing a metal oxide in a channel formation region. The first electrode is electrically connected to the third electrode via the second electrode. The third electrode is provided to be exposed on a surface of the first element layer. The first through electrode is provided to be exposed on a surface of the second substrate and is electrically connected to the first electrode. The second substrate and the first element layer are provided to be stacked in a direction perpendicular or substantially perpendicular to a surface of the first substrate. The first transistor is provided in a region overlapping with the first through electrode.
