18559840. SWITCHING ELEMENT DRIVE CIRCUIT simplified abstract (Mitsubishi Electric Corporation)

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SWITCHING ELEMENT DRIVE CIRCUIT

Organization Name

Mitsubishi Electric Corporation

Inventor(s)

Kazuaki Hiyama of Tokyo (JP)

SWITCHING ELEMENT DRIVE CIRCUIT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18559840 titled 'SWITCHING ELEMENT DRIVE CIRCUIT

The abstract of the patent application describes a system where a buffer and an inverting buffer are used to control the gate drive signal and base drive signal of an IGBT, respectively.

  • A buffer outputs a gate drive signal matching the logic level of an element control signal.
  • An inverting buffer outputs a base drive signal opposite to the logic level of the element control signal.
  • A resistance is placed between the buffer output and the IGBT gate.
  • A PNP bipolar transistor is connected with its emitter to the IGBT gate and its collector to reference potential.
  • A diode is placed between the buffer output and the base of the PNP bipolar transistor.
  • The inverting buffer output is connected to the base of the PNP bipolar transistor through a resistance.

Potential Applications: - Power electronics - Motor control systems - Renewable energy systems

Problems Solved: - Efficient control of IGBTs - Improved performance of power systems

Benefits: - Enhanced reliability - Increased efficiency - Better control over power electronics

Commercial Applications: Title: "Advanced IGBT Control System for Power Electronics" This technology can be used in industries such as electric vehicles, renewable energy, and industrial automation for improved performance and efficiency.

Questions about the technology: 1. How does this system improve the control of IGBTs compared to traditional methods? 2. What are the key advantages of using a PNP bipolar transistor in this setup?


Original Abstract Submitted

In the present disclosure, a buffer outputs a gate drive signal indicating the same logic level as an element control signal, and an inverting buffer outputs a base drive signal indicating the opposite logic level to the element control signal. The resistance is interposed between the output of the buffer and the gate of an IGBT. A PNP bipolar transistor has its emitter connected to the gate of the IGBT and its collector connected to reference potential. A diode is interposed between the output of the buffer and a base of the PNP bipolar transistor. An output of the inverting buffer is connected to the base of the PNP bipolar transistor through a resistance.