18558217. POWER SEMICONDUCTOR DEVICE AND METHOD FOR DETECTING AGING-RELATED DAMAGE TO A POWER SEMICONDUCTOR DEVICE simplified abstract (Robert Bosch GmbH)
POWER SEMICONDUCTOR DEVICE AND METHOD FOR DETECTING AGING-RELATED DAMAGE TO A POWER SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Karl Oberdieck of Neckartenzlingen (DE)
Manuel Riefer of Reutlingen (DE)
POWER SEMICONDUCTOR DEVICE AND METHOD FOR DETECTING AGING-RELATED DAMAGE TO A POWER SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18558217 titled 'POWER SEMICONDUCTOR DEVICE AND METHOD FOR DETECTING AGING-RELATED DAMAGE TO A POWER SEMICONDUCTOR DEVICE
Simplified Explanation:
This patent application describes a power semiconductor device with a heat sink and three half-bridge modules arranged on the heat sink. The device also includes at least one ultrasonic sensor and at least one MEMS sensor placed on opposite sides of the heat sink.
- The power semiconductor device consists of a heat sink and three half-bridge modules.
- At least one ultrasonic sensor and at least one MEMS sensor are integrated into the device.
- The ultrasonic sensor and MEMS sensor are positioned on opposite sides of the heat sink for optimal functionality.
Key Features and Innovation:
- Integration of ultrasonic and MEMS sensors in a power semiconductor device.
- Placement of sensors on opposite sides of the heat sink for efficient operation.
- Utilization of three half-bridge modules for enhanced power management.
Potential Applications:
The technology can be applied in:
- Power electronics
- Renewable energy systems
- Industrial automation
Problems Solved:
- Improved thermal management in power semiconductor devices.
- Enhanced sensor capabilities for better performance.
- Efficient power distribution with the use of half-bridge modules.
Benefits:
- Increased efficiency and reliability in power electronics.
- Enhanced monitoring and control through sensor integration.
- Optimal heat dissipation for prolonged device lifespan.
Commercial Applications:
Title: Advanced Power Semiconductor Device with Integrated Sensors This technology can be utilized in various commercial applications such as:
- Electric vehicles
- Solar inverters
- Motor drives
Questions about Power Semiconductor Device with Integrated Sensors:
1. How does the integration of ultrasonic and MEMS sensors benefit the overall performance of the power semiconductor device?
- The integration of ultrasonic and MEMS sensors allows for enhanced monitoring and control of the device, leading to improved efficiency and reliability.
2. What are the potential challenges in implementing this technology in commercial applications?
- Some potential challenges may include cost of implementation, compatibility with existing systems, and scalability for mass production.
Original Abstract Submitted
A power semiconductor device. The power semiconductor device includes a heat sink and three half-bridge modules, which are each arranged on the heat sink by way of a connecting region. The power semiconductor device includes at least one ultrasonic sensor and at least one MEMS sensor, wherein the at least one ultrasonic sensor and the at least one MEMS sensor are arranged on opposite sides of the heat sink.
