18557315. OPTICAL SEMICONDUCTOR ELEMENT simplified abstract (Mitsubishi Electric Corporation)
Contents
OPTICAL SEMICONDUCTOR ELEMENT
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
Hiroyuki Kawahara of Tokyo (JP)
OPTICAL SEMICONDUCTOR ELEMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18557315 titled 'OPTICAL SEMICONDUCTOR ELEMENT
The optical semiconductor element described in the patent application consists of a semiconductor substrate, a stripe-shaped mesa structure, and a mesa buried layer.
- The semiconductor substrate is of the first-conductivity type.
- The mesa structure includes a laminate of a first-conductivity-type cladding layer, an active layer, and a second-conductivity-type first cladding layer.
- The mesa buried layer consists of a semi-insulating first buried layer, a first-conductivity-type second buried layer, and a semi-insulating third buried layer doped with a transition metal.
Potential Applications: - This technology can be used in optical communication systems. - It can also be applied in laser diodes for various industrial purposes.
Problems Solved: - The technology addresses the need for efficient and high-performance optical semiconductor elements.
Benefits: - Improved optical performance and reliability. - Enhanced efficiency in optical communication systems.
Commercial Applications: Title: Advanced Optical Semiconductor Elements for High-Performance Applications This technology can be utilized in the telecommunications industry for faster and more reliable data transmission. It can also find applications in medical equipment, industrial lasers, and scientific research instruments.
Questions about Optical Semiconductor Elements: 1. What are the key components of an optical semiconductor element? - An optical semiconductor element typically consists of a semiconductor substrate, a mesa structure, and a buried layer.
2. How does the mesa buried layer contribute to the performance of the optical semiconductor element? - The mesa buried layer helps in improving the optical performance and reliability of the semiconductor element by providing additional structural support and enhancing conductivity.
Original Abstract Submitted
An optical semiconductor element of the present disclosure includes: a first-conductivity-type semiconductor substrate; a stripe-shaped mesa structure including a laminate of a first-conductivity-type cladding layer, an active layer, and a second-conductivity-type first cladding layer layered on the first-conductivity-type semiconductor substrate; and a mesa buried layer including a semi-insulating first buried layer, a first-conductivity-type second buried layer, and a semi-insulating third buried layer doped with a transition metal, which are sequentially formed on both side surfaces of the mesa structure on the first-conductivity-type semiconductor substrate.
