18557252. VERTICAL TRANSISTORS AND METHOD FOR PRODUCING THE SAME simplified abstract (Robert Bosch GmbH)
Contents
VERTICAL TRANSISTORS AND METHOD FOR PRODUCING THE SAME
Organization Name
Inventor(s)
Christian Huber of Ludwigsburg (DE)
Jens Baringhaus of Sindelfingen (DE)
Roland Puesche of Rommelsbach (DE)
VERTICAL TRANSISTORS AND METHOD FOR PRODUCING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18557252 titled 'VERTICAL TRANSISTORS AND METHOD FOR PRODUCING THE SAME
Simplified Explanation: The patent application describes a vertical transistor with an outer region and a membrane region, where the semiconductor substrate is structured to have a rear trench in the membrane region. A masking layer is used to control the lateral extension of the layer stack in the membrane region.
Key Features and Innovation:
- Vertical transistor design with outer and membrane regions
- Rear trench in the membrane region free of semiconductor substrate
- Masking layer to control lateral extension of the layer stack
- Layer stack includes drift layer, component-defining layer system, and control terminal (gate electrode)
Potential Applications: This technology could be applied in the semiconductor industry for high-performance vertical transistors in various electronic devices such as smartphones, computers, and power amplifiers.
Problems Solved: This innovation addresses the need for efficient vertical transistor designs with controlled lateral extension of the layer stack, improving overall device performance and reliability.
Benefits:
- Enhanced performance of vertical transistors
- Improved control over lateral extension of layer stack
- Increased reliability of electronic devices
Commercial Applications: Potential commercial applications include the production of advanced electronic devices, leading to improved performance and reliability in the consumer electronics market.
Prior Art: Prior research in vertical transistor design and semiconductor substrate structuring may provide insights into similar innovations in the field.
Frequently Updated Research: Ongoing research in semiconductor technology and vertical transistor design may offer new advancements and applications for this innovative technology.
Questions about Vertical Transistors: 1. What are the key advantages of using a vertical transistor design over traditional horizontal transistors? 2. How does the use of a masking layer impact the performance and efficiency of vertical transistors?
Original Abstract Submitted
A vertical transistor with an outer region and a membrane region. At least a portion of a semiconductor substrate is arranged in the outer region. The semiconductor substrate is structured in such a way that a rear trench is arranged in the membrane region. The rear trench is free of semiconductor substrate. A masking layer is arranged in the outer region and/or in the membrane region. A layer stack is arranged in the membrane region, wherein the layer stack includes at least one drift layer, at least one component-defining layer system, and at least one control terminal, preferably a gate electrode. The masking layer is configured such that the region on the masking layer is substantially free of the layer stack so that the lateral extension of the layer stack is adjusted by means of the masking layer.
