18557210. METHOD FOR PRODUCING A VERTICAL POWER SEMICONDUCTOR COMPONENT, AND VERTICAL POWER SEMICONDUCTOR COMPONENT simplified abstract (Robert Bosch GmbH)
METHOD FOR PRODUCING A VERTICAL POWER SEMICONDUCTOR COMPONENT, AND VERTICAL POWER SEMICONDUCTOR COMPONENT
Organization Name
Inventor(s)
Jens Baringhaus of Sindelfingen (DE)
Christian Huber of Ludwigsburg (DE)
METHOD FOR PRODUCING A VERTICAL POWER SEMICONDUCTOR COMPONENT, AND VERTICAL POWER SEMICONDUCTOR COMPONENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18557210 titled 'METHOD FOR PRODUCING A VERTICAL POWER SEMICONDUCTOR COMPONENT, AND VERTICAL POWER SEMICONDUCTOR COMPONENT
The method described in the patent application involves producing vertical power semiconductor components using a silicon wafer and a subcarrier wafer.
- Applying a silicon wafer onto a subcarrier wafer, with the front side of the vertical power semiconductor components on the silicon wafer.
- Grinding the silicon wafer to a specific thickness.
- Dry etching the silicon wafer and etching the buffer layer.
- Implanting ions into the drift layer to form a contact semiconductor layer.
- Creating an ohmic contact by applying a metal layer onto the contact semiconductor layer.
- Removing the subcarrier wafer.
Potential Applications: - Power electronics - Renewable energy systems - Electric vehicles - Industrial automation - Consumer electronics
Problems Solved: - Efficient production of vertical power semiconductor components - Improved performance and reliability of power electronics - Enhanced energy efficiency in various applications
Benefits: - Higher power density - Improved thermal management - Enhanced electrical performance - Cost-effective manufacturing process
Commercial Applications: Vertical power semiconductor components can be used in various industries such as power electronics, renewable energy systems, electric vehicles, industrial automation, and consumer electronics. The technology offers improved performance, reliability, and energy efficiency, making it a valuable solution for companies looking to enhance their products.
Questions about Vertical Power Semiconductor Components: 1. How does the method of producing vertical power semiconductor components differ from traditional manufacturing processes? 2. What are the key advantages of using vertical power semiconductor components in power electronics applications?
Frequently Updated Research: Researchers are continually exploring new materials and manufacturing techniques to further improve the performance and efficiency of vertical power semiconductor components. Stay updated on the latest advancements in the field to leverage the full potential of this technology.
Original Abstract Submitted
A method for producing vertical power semiconductor components. The method includes: applying a first side of a silicon wafer onto a subcarrier wafer, wherein a front side of the vertical power semiconductor components is arranged on the first side of the silicon wafer and the front side of the vertical power semiconductor components comprises a buffer layer and a drift layer; grinding the silicon wafer to a specific thickness; dry etching the silicon wafer; etching the buffer layer; implanting ions into the drift layer, wherein a contact semiconductor layer is formed; generating an ohmic contact by applying a metal layer onto the contact semiconductor layer; and removing the subcarrier wafer.
